Dual-Gate Phototransistor With Perovskite Quantum ... - IEEE Xplore

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Aug 23, 2017 - Xiang Liu, Zhi Tao, Wenjian Kuang, Qianqian Huang, Qing Li, Jing ... X. Liu and W. Kuang are with the Display center, Southeast University,.
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IEEE ELECTRON DEVICE LETTERS, VOL. 38, NO. 9, SEPTEMBER 2017

Dual-Gate Phototransistor With Perovskite Quantum Dots-PMMA Photosensing Nanocomposite Insulator Xiang Liu, Zhi Tao, Wenjian Kuang, Qianqian Huang, Qing Li, Jing Chen, and Wei Lei

Abstract — Dual-gate InGaZnO thin-film-transistors were fabricated to demonstrate their feasibility as phototransistors by fully exploiting the perovskite quantum dots (QDs) with superior quantum yield. Here, we show that by coupling the top-gate photo sensing polymethyl methacrylate (PMMA)/CsPbBr3 QDs hybrid insulator with the classic SiO2 bottom-gate insulator, the phototransistor can exhibit a combination of excellent detective performance (3.75 × 1012 Jones detectivity and 1 × 103 A/W responsivity) and electrical performance (small 3-V threshold voltage, 0.53-V/decade substhreshold slop, and 0.1-V hysteretic threshold voltage’s shift). Additionally, this dual-gate phototransistor exhibits high stability and accelerated detecting speed (