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Electromodulation spectroscopy in midinfrared spectral region: The band offset study for GaSb-based quantum wells
This content has been downloaded from IOPscience. Please scroll down to see the full text. 2009 J. Phys.: Conf. Ser. 146 012029 (http://iopscience.iop.org/1742-6596/146/1/012029) View the table of contents for this issue, or go to the journal homepage for more Download details: IP Address: 104.249.178.63 This content was downloaded on 02/04/2017 at 09:30 Please note that terms and conditions apply.
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2nd National Conference on Nanotechnology ‘NANO 2008’ Journal of Physics: Conference Series 146 (2009) 012029
IOP Publishing doi:10.1088/1742-6596/146/1/012029
Electromodulation spectroscopy in midinfrared spectral region: The band offset study for GaSb-based quantum wells R. Kudrawiec* and J. Misiewicz Institute of Physics, Wrocław University of Technology Wybrzeze Wyspianskiego 27, 50-370 Wrocław, Poland *
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Abstract. Electromodulation spectroscopy (photoreflecntance and electroreflectance) is an excellent technique to study optical transitions in quantum well (QW) structures but the development of this technique in the midinfrared spectral region is still limited due to various reasons. In this work we report our recent progress in the development of contactless electroreflectance spectroscopy in midinfrared and discuss some aspects and perspectives of this technique in the context of its application to study optical transitions in GaSb-based QWs. Especially, we have focused on the band offset issue in GaInAsSb/GaSb QWs since the accurate study/verification of band gap discontinuities at QW interfaces is a crucial point in the optimization of laser structures grown on GaSb substrate and operating in the 1.8-3.0 µm spectral range.
1. Introduction Semiconductor lasers operating in the midinfrared regime are attractive light sources for various applications including remote gas sensing, pollutant detection, medical procedures or laser spectroscopy. GaSb-based quantum wells (QWs) are one of the most promising material systems to achieve light emission in this spectral range [1-6]. In general, the band structure of a GaIn(As)Sb/GaSb QW (i.e., the valence band position) can be predicted within the “model-solid” theory [7], but the accuracy of the valence band offset determination within this theory can be comparable with the band gap discontinuities at QW interfaces (~0.1 eV versus
