GaN, AlN, InN and Their Alloys Page 1 of 9 MRS Proceedings Volume ...

MRS Proceedings Volume 831/GaN, AlN, InN and Their Alloys

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2004 FALL MEETING PROCEEDINGS Symposium E

GaN, AlN, InN and Their Alloys Editors: C. Wetzel, B. Gil, M. Kuzuhara, M. Manfra MRS Proceedings Volume 831 Purchase this Volume: Order Online | Download Order Form

Structural Defects Rlated Issues of GaN-Based Laser Diodes E1.1 Shigetaka Tomiya, Motonobu Takeya, Shu Goto, and Masao Ikeda Latest Developments in Blue-Violet Laser Diodes Grown by Molecular Beam Epitaxy E1.2 V. Bousquet, M. Kauer, K. Johnson, C. Zellweger, S.E. Hooper, and J. Heffernan Ribbon Award Winner

Growth, Characterization, and Application of High Al-Content AlGaN and High Power III-Nitride Ultraviolet Emitters E1.4 Z. Ren, S.-R. Jeon, M. Gherasimova, G. Cui, J. Han, H. Peng, Y.K. Song A.V. Nurmikko, L. Zhou, W. Goetz, M. Krames, and H.-K. Cho

Fabrication of LED Based on III-V Nitride and Its Applications E1.6 N. Shibata Junction Temperature Measurements in Deep-UV Light-Emitting Diodes E1.7 Y. Xi, J.-Q. Xi, Th. Gessmann, J.M. Shah, J.K. Kim, E.F. Schubert, A.J. Fischer, M.H. Crawfor K.H.A. Bogart, and A.A. Allerman Effect of GaN Surface Treatment on the Morphological and Optoelectronic Response of Violet Light Emitting Diodes E1.8 Muhammad Jamil, James R. Grandusky, and Fatemeh Shahedipour-Sandvik Moth-Eye Light-Emitting Diodes E1.9 Hideki Kasugai, Yasuto Miyake, Akira Honshio, Takeshi Kawashima, Kazuyoshi Iida, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki, Hiroyuki Kinoshita, and Hiromu Sh Growth of Nonpolar GaN(1100) Films and Heterostructures by Plasma-Assisted Molecular Be Epitaxy E2.1 Oliver Brandt, Yue Jun Sun, and Klaus H. Ploog On the Dynamics of InGaN Dot Formation by RF-MBE Growth E2.2 Tomohiro Yamaguchi, Sven Einfeldt, Stephan Figge, Carsten Kruse, Claudia Roder, and and Detlef Hommel

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GaN Quantum Dots Grown at High Temperatures by Molecular Beam Epitaxy E2.4 Tao Xu, Adrian Williams, Christos Thomidis, Theodore D. Moustakas, Lin Zhou, and David J. Smith Ammonothermal Growth of GaN Utilizing Negative Temperature Dependence of Solubility in B Ammonia E2.8 Tadao Hashimoto, Kenji Fujito, Feng Wu, Benjamin A. Haskell, Paul T. Fini, James S. Speck, Shuji Nakamura Metalorganic Chemical Vapor Deposition of Non-Polar III-Nitride Films Over a-Plane SiC Substrates E2.9 Jiawei Li, Zheng Gong, Changqing Chen, Vinod Adivarahan, Mikhail Gaevski, Edmundas Kuokstis, Maxim Shatalov, Ying Gao, Zehong Zhang, Arul Arjunan, T. S. Sudarshan, H. Paul Maruska, Jinwei Yang, and M. Asif Khan Sublimation Growth of Aluminum Nitride-Silicon Carbide Alloy Crystals on SiC (0001) Substrat E3.1 Z. Gu, J.H. Edgar, E.A. Payzant, H.M. Meyer, L.R. Walker, A. Sarua, and M. Kuball Determination of Surface Barrier Height and Surface State Density in GaN Films Grown on Sapphire Substrates E3.2 Seong-Eun Park, Joseph J. Kopanski, Youn-Seon Kang, Lawrence H. Robins, and Hyun-Keel Shin Excess Carrier Lifetime Measurements for GaN on Sapphire Substrates with Various Doping Concentrations and Surface Conditions by the Microwave Photoconductivity Decay Method E3 Masashi Kato, Hideki Watanabe, Masaya Ichimura, and Eisuke Arai Fabrication and Characterization of GaN Nanopillar Arrays E3.5 Y.D. Wang, S. Tripathy, S.J. Chua, and C.G. Fonstad The Composition Dependence of the Optical Properties of InN-Rich InGaN Grown by MBE E3 R.W. Martin, P.R. Edwards, S. Hernandez, K. Wang, I. Fernandez-Torrente, M. Kurouchi, Y. Nanishi, K.P. O'Donnell Unusual Properties of the Red and Green Luminescence Bands in Ga-Rich GaN E3.7 M.A. Reshchikov and H. Morkoç Reduction of Dislocation Density in AlGaN With High AlN Molar Fraction by Using a Rugged A Epilayer E3.11 Akira Ishiga, Takashi Onishi, Yuhuai Liu, Masaya Haraguchi, Noriyuki Kuwano, Tomohiko Shibata, Mitsuhiro Tanaka, Hideto Miyake, and Kazumasa Hiramatsu Fabrication and Characterization of UV Schottky Detectors by Using a Freestanding GaN Substrate E3.12 Yasuhiro Shibata, Atsushi Motogaito, Hideto Miyake, Kazumasa Hiramatsu, Youichiro Ohuchi Hiroaki Okagawa, Kazuyuki Tadatomo, Tatsuya Nomura, Yutaka Hamamura, and Kazutoshi F Strain-Induced Effects on the Resonant Tunneling of Holes in Zinc-Blende AlyGa1-yN/AlxGa1 xN/AlyGa1-yN Heterostructures E3.13 C. Meguenni, K. Zitouni , N. Mokdad, and A. Kadri Excitation Wavelength Dependent Raman Scattering in Low and Highly Degenerate InN Films E3.16 V.M. Naik, H. Dai, R. Naik, D.B. Haddad, J.S. Thakur, G.W. Auner, H. Lu, and W.J. Schaff Growth of Uncracked Al0.80Ga0.20N/GaN DBR on Si(111) E3.17


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M.B. Charles, M.J. Kappers, and C.J .Humphreys Electrical Characterization of As and [As+Si] Doped GaN Grown by Metalorganic Chemical Va Deposition E3.19 M. Ahoujja, S. Elhamri , and R. Berney, Y.K. Yeo, and R. L. Hengehold Polarity Control of GaN Films Grown by Metal Organic Chemical Vapor Deposition on (0001) Sapphire Substrates E3.20 Seiji Mita, Ramon Collazo, Raoul Schlesser, and Zlatko Sitar Effect of Low Temperature Annealing on High Field Magnetoresistance and Hall Effect in (Ga, As Dilute Magnetic Semiconductors E3.21 K. Ghosh, Mohammad Arif, T. Kehl, R.J. Patel, S.R. Mishra, and J.G. Broerman Dependence of the E2 and A1(LO) Modes on InN Fraction in InGaN Epilayers E3.22 S. Hernández, R. Cuscó, L. Artús, K.P. O'Donnell, R.W. Martin, I.M. Watson, Y. Nanishi, M. Kurouchi, and W. Van der Stricht Initial Stages of Growth of Gallium Nitride via Iodine Vapor Phase Epitaxy E3.23 W.J. Mecouch, B.J. Rodriguez, Z.J. Reitmeier, J-S. Park, R.F. Davis, and Z. Sitar Characterization of the Carrier Confinement for InGaN/GaN Light Emitting Diode With Multiquantum Barriers E3.27 Jen-Cheng Wang, Chung-Han Lin, Ray-Ming Lin, Tzer-En Nee, Bor-Ren Fang, and Ruey-Yu Wang Structural Properties of Eu Doped GaN and its Relation With Luminescence Properties E3.28 Hyungjin Bang, Takahiro Maruyama, Shigeya Naritsuka, and Katsuhiro Akimoto Extended X-ray Absorption Fine Structure Studies of InGaN Epilayers E3.30 V. Katchkanov, K.P. O'Donnell, J.F.W. Mosselmans, S. Hernandez, R.W. Martin, Y. Nanishi, M Kurouchi, I. Watson, W. Van der Stricht, and E. Calleja X-ray Excited Optical Luminescence Studies of InGaN and Rare-Earth Doped GaN Epilayers E3.31 V. Katchkanov, J.F.W. Mosselmans, K.P. O'Donnell, N.R.J. Poolton, and S. Hernandez Growth and Characterization of InGaN/GaN LEDs on Corrugated Interface Substrate Using MOCVD E3.32 Sunwoon Kim, Jeong Tak Oh, Kyu Han Lee, Dong Joon Kim, Je Won Kim, Yong Chun Kim, a Jeong Wook Lee The Effect of Periodic Silane Burst on the Properties of GaN on Si (111) Substrates E3.33 K.Y. Zang, S.J. Chua, C.V. Thompson, L.S. Wang, S. Tripathy, and S.Y. Chow Mechanism of Metalorganic MBE Growth of High Quality AlN on Si (111) E3.35 I. Gherasoiu, S. Nikishin, G. Kipshidze, B. Borisov, A. Chandolu, M. Holtz, and H. Temkin Discrete Steps in the Capacitance-Voltage Characteristics of GaInN/GaN Light Emitting Diode Structures E3.38 Y. Xia, E. Williams, Y. Park, I. Yilmaz, J.M. Shah, E.F. Schubert, and C. Wetzel Optimization of p-type AlGaN/GaN and GaN/InGaN Superlattice Design for Enhanced Vertica Transport E3.39 M.Z. Kauser, A. Osinsky, J.W. Dong, B. Hertog, A. Dabiran, and P.P. Chow Influence of Mis-Orientation of C-Plane Sapphire Substrate on the Early Stages of MOCVD Growth of GaN Thin Films E3.40


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Seong-woo Kim, Hideo Aida, and Toshimasa Suzuki Thermally Stable Transparent Ru-Si-O Schottky Contacts for n-Type GaN and AlGaN E3.41 E. Kaminska, A. Piotrowska, K. Golaszewska, R. Lukasiewicz, A. Szczesny, E. Kowalczyk, P. Jagodzinski, M. Guziewicz, A. Kudla, A. Barcz, and R. Jakiela Probing the Formation of Two-Dimensional Electron Gas in AlInGaN/ GaN Heterostructures by Photoluminescence Spectroscopy E3.43 C.B. Soh, W. Liu , S.J. Chua, S. Tripathy, and D.Z. Chi MBE Growth and Characterization of Device-Quality Thick InN Epilayers; Comparison Betwee Polarity and In-Polarity Growth Processes E4.1 Akihiko Yoshikawa, Yoshihiro Ishitani, Song-Bek Che, Ke Xu, Xinqiang Wang, Masayoshi Yoshitani, Wataru Terashima, and Naoki Hashimoto Effects of the Nitridation Process of (0001) Sapphire on Crystalline Quality of InN Grown by R MBE E4.2 Daisuke Muto, Ryotaro Yoneda, Hiroyuki Naoi, Masahito Kurouchi, Tsutomu Araki, and Yasus Nanishi RF-MBE Growth of InN Dots on N-Polar GaN Grown on Vicinal c-Plane Sapphire E4.4 Naoki Hashimoto, Naohiro Kikukawa, Song-Bek Che, Yoshihiro Ishitani, and Akihiko Yoshikaw Mechanisms of Raman Scattering in Doped Indium Nitride E4.8 Claire Pinquier, François Demangeot, Jean Frandon, Miguel Gaio, Olivier Briot, Bénédicte Maleyre, Sandra Clur-Ruffenach, and Bernard Gil Micro-Photoluminescence Studies of Excitonic and Multiexcitonic States of Quantum Dot-Like Localization Centers in InGaN/GaN Structures E5.3 K. Sebald, H. Lohmeyer, J. Gutowski, S. Einfeldt, C. Roder, and D. Hommel Trophy Award Winner

Efficient Luminescence from {11.2} InGaN/GaN Quantum Wells E5.5 Mitsuru Funato, Koji Nishizuka, Yoichi Kawakami, Yukio Narukawa, and Takashi Mukai

Carbon-Related Deep States in Compensated n-Type and Semi-Insulating GaN:C and Their Influence on Yellow Luminescence E5.7 A. Armstrong, D. Green, A.R. Arehart, U.K. Mishra, J.S. Speck, and S.A. Ringel Near Field Optical Spectroscopy of GaN/AlN Quantum Dots E5.8 A. Neogi, B.P. Gorman, H. Morkoç, T. Kawazoe, M. Ohtsu, and M. Kuball Recombination Mechanism in Short-Wavelength GaN/AlGaN Quantum Wells E5.9 D. Fuhrmann, T. Retzlaff, U. Rossow, and A. Hangleiter Oxygen Related Shallow Acceptor in GaN E5.10 B. Monemar, P.P. Paskov, F. Tuomisto, K. Saarinen, M. Iwaya, S. Kamiyama , H. Amano, I. Akasaki, and S. Kimura Photoluminescence Study of Plastically Deformed GaN E5.11 I. Yonenaga, H. Makino, S. Itoh , T. Goto, and T. Yao AlGaN/GaN Field Effect Schottky Barrier Diode for a Low Loss Switching Device E6.3 Seikoh Yoshida, Nariaki Ikeda, Jiang Li, Kohji Hataya, Takahiro Wada, and Hironari Takehara AlGaN/GaN HFETs and Insulated Gate HFETs DC and RF Stability E6.4 Alexei Koudymov, Salih Saygi, Naveen Tipirneni, Grigory Simin, Vinod Adivarahan, Jinwei Ya


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and M. Asif Khan Normally-Off Operation GaN HFET Using a Thin AlGaN Layer for Low Loss Switching Devices E6.5 Nariaki Ikeda, Kazuo Kato, Jiang Li, Kohji Hataya, and Seikoh Yoshida Surface Stabilization for Higher Performance AlGaN/GaN HEMT With In Situ MOVPE SiN E6. M. Germain, M. Leys, J. Derluyn, S. Boeykens, S. Degroote, W. Ruythooren, J. Das, R. Vandersmissen, D.P. Xiao, W. Wang, and G. Borghs Ribbon Award Winner

Resonantly Enhanced Second Harmonic Generation in a One-Dimension GaN-Based Photonic Crystal Slab E7.1 Jérémi Torres, Marine Le Vassor d'Yerville, David Cassagne, René Legr Jean-Paul Lascaray, Emmanuel Centeno, Jean-Paul Albert, and Dominiq Coquillat

Ribbon Award Winner

Ultrafast All-Optical Switches Based on Intersubband Transitions in GaN/AlN Multiple Quantum Wells for Tb/s Operation E7.3 Jahan M. Dawlaty, Farhan Rana, and William J. Schaff

The Ga-Nitride/Air Two-Dimensional Photonic Quasi-Crystals Fabricated on GaN-Based Light Emitters E7.4 Bei Zhang, ZhenSheng Zhang, Jun Xu, Qi Wang, ZhiJian Yang, WeiHua Chen, XiaoDong Hu, ZhiXin Qin, GuoYi Zhang, and DaPeng Yu High Quality, Low Cost Continuous Poly-GaN Film on Si and Glass Substrates Produced by S Coating E8.2 Huaqiang Wu, Athanasios Bourlinos, Emmanuel P. Giannelis, and Michael G. Spencer The Intrinsic Free Carrier Mobility in AlGaN/GaN Quantum Wells E8.6 F. Carosella, M.Germain, and J.-L. Farvacque Reduction of Threading Dislocations in GaN Grown on ‘c' Plane Sapphire by MOVPE E8.8 R. Datta, M.J. Kappers, J.S. Barnard, and C.J. Humphreys Microstructure of Highly p-Type Doped GaN Sub-Contact Layers for Low-Resistivity Contacts E8.10 R. Kröger, J. Dennemarck, T. Böttcher, S. Figge, and D. Hommel Cathodoluminescence of Praseodymium Doped AlN, GaN and Turbo Static BN E8.12 Muhammad Maqbool, H.H. Richardson, and M.E. Kordesch Strong Room Temperature 510 nm Emission From Cubic InGaN/GaN Multiple Quantum Wells E8.15 S.F. Li, D.J. As, K. Lischka, D.G. Pacheco-Salazar, L.M.R. Scolfaro, J.R. Leite, F. Cerdeira, an E.A. Meneses High Pressure Annealing of HVPE GaN Free-Standing Films: Redistribution of Defects and St E8.18 T. Paskova, T. Suski, M. Bockowski, P.P. Paskov, V. Darakchieva, B. Monemar, F. Tuomisto, Saarinen, N. Ashkenov, M. Schubert, C. Roder, and D. Hommel Comparison of the Effect of Gate Dielectric Layer on 2DEG Carrier Concentration in Strained AlGaN/GaN Heterostructure E8.20 W. Wang, J. Derluyn, M. Germain, I. Dewolf, M. Leys, S. Boeykens , S. Degroote, W. Ruythoo J. Das, D. Schreurs, B. Nauwelaers, and G. Borghs


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X-ray Characterization of GaN Single Crystal Layers Grown by the Ammonothermal Techniqu HVPE GaN Seeds and by the Sublimation Technique on Sapphire Seeds E8.23 Balaji Raghothamachar, Michael Dudley, Buguo Wang, Michael Callahan, David Bliss, Phanikumar Konkapaka, Huaqiang Wu, and Michael Spencer Synchrotron White Beam X-ray Topography (SWBXT) and High Resolution Triple Axis Diffract Studies on AlN layers Grown on 4H- and 6H-SiC Seeds E8.24 Balaji Raghothamachar, Michael Dudley, Rafael Dalmau, Raoul Schlesser, and Zlatko Sitar P-Type GaN Epitaxial Layers and AlGaN/GaN Heterostructures With High Hole Concentration Mobility Grown by HVPE E8.28 A. Usikov, O. Kovalenkov, V. Ivantsov, V. Sukhoveev, V. Dmitriev, N. Shmidt, D. Poloskin, V. Petrov, and V. Ratnikov Impact of H2-Preannealing of the Sapphire Substrate on the Crystallization of Low-Temperatu Deposited AlN Buffer Layer E8.30 Michinobu Tsuda, Krishnan Balakrishnan, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki Low-Frequency Noise Characterization in AlGaN/GaN HEMTs With Varying Gate Recess Dep E8.31 Shrawan. K. Jha, Bun. H. Leung, Charles C. Surya, Heins Schweizer, and Manfred. H. Pilkhuh Influence of Substrate Misorientation Angle and Direction in Growth of GaN on Off-Axis SiC (0001) E8.34 Jun Suda, Yuki Nakano, and Tsunenobu Kimoto Molecular Beam Epitaxy of GaN on Lattice-Matched ZrB2 Substrates Using Low-Temperature GaN and AlN Nucleation Layers E8.36 Rob Armitage, Kazuhiro Nishizono, Jun Suda, and Tsunenobu Kimoto Self-Organized GaN/AlN Superlattice Nanocolumn Crystals Grown by RF-MBE E8.39 Kouji Yamano, Akihiko Kikuchi, and Katsumi Kishino Spintronics in Nitrides E9.1 Tomasz Dietl Evidence of Carrier Mediated Ferromagnetism in GaN:Mn/GaN:Mg Heterostructures E9.2 F. Erdem Arkun, Mason J. Reed, Erkan Acar Berkman, Nadia A. El-Masry, John M. Zavada, M Oliver Luen, Meredith L. Reed, and Salah M. Bedair Synthesis and Properties of GaxMn1-xN Films E9.3 R. Zhang, Y.Y. Yu, X.Q. Xiu, Z.L. Xie, S.L .Gu, B. Shen, Y. Shi, and Y.D. Zheng Impact of Manganese Incorporation on the Structural and Magnetic Properties of MOCVDGrow Ga1-xMnxN E9.4 Matthew H. Kane, Ali Asghar, Martin Strassburg, Qing Song, Adam M. Payne, Christopher J. Summers, Z. John Zhang, Nikolaus Dietz, and Ian T. Ferguson Optical and Structural Investigations on Mn-Ion States in MOCVD-Grown Ga1-xMnxN E9.5 Martain Strassburg, Jayantha Senawiratne, Christoph Hums, Nikolaus Dietz, Matthew H. Kane Asghar, Christopher J. Summers, Ute Haboeck, Axel Hoffmann, Dmitry Azamat, Wolfgang Gehlhoff, and Ian T. Ferguson Ribbon Award Winner

Site Multiplicity of Rare Earth Ions in III-Nitrides E9.6 K.P. O'Donnell, V. Katchkanov, K. Wang, R.W. Martin, P.R. Edwards, B. Hourahine, E. Nogales , J.F.W. Mosselmans, B. De Vries, and the RENiB


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Consortium Aquamarine Luminescence Band in Undoped GaN E9.8 M.A. Reshchikov, L. He, R.J. Molnar, S.S. Park , K.Y. Lee, and H. Morkoç Advances in AlGaN-based Deep UV LEDs E10.1 M.H. Crawford, A.A. Allerman, A.J. Fischer, K.H.A. Bogart, S.R. Lee, W.W. Chow, S. Wieczore R.J. Kaplar, and S.R. Kurtz Development of Dual MQW Region LEDs for General Illumination E10.3 David Brackin Nicol, Ali Asghar, Martin Strassburg, My Tran, Ming Pan, Hun Kang, Ian T. Ferguson, Mustafa Alevi, Jayantha Senawiratne, Christoph Hums, Nikolaus Dietz, and Axel Hoffmann Electro-Optic and Thermal Studies of Multi-Quantum Well Light Emitting Diodes in InGaN/GaN/Sapphire Structure E10.4 Jeong Park, Moo Whan Shin, and Chin C. Lee Nitride-Based Light-Emitting Diodes Grown on Particular Substrates: ZrB2, (3038) 4H-SiC and Faced Sapphire E10.6 Satoshi Kamiyama, Motoaki Iwaya, Hiroshi Amano, and Isamu Akasaki Efficient and Reliable Homoepitaxially-Grown InGaN-Based Light-Emitting Diodes E10.7 X.A. Cao, J.M. Teetsov, S.F. LeBoeuf, S.D. Arthur, and J. Kretchmer Characterization of Minority-Carrier Hole Transport in Nitride-Based Light-Emitting Diodes Wit Optical and Electrical Time-Resolved Techniques E10.9 R.J. Kaplar, S.R. Kurtz, D.D. Koleske, A.A. Allerman, A.J. Fischer, and M.H. Crawford Grain Expansion and Subsequent Seeded Growth of AlN Single Crystals E11.1 Dejin Zhuang, Raoul Schlesser, and Zlatko Sitar Optimization of Growth and Activation of Highly Doped p-Type GaN for Tunnel Junctions E11. David B. Nicol, Ali Asghar, My Tran, Dhairya Mehta, and Ian T. Ferguson Sublimation Growth of AlN Bulk Crystals by Seeded and Spontaneous Nucleation Methods E1 Krishnan Balakrishnan, Masao Banno, Kiyotaka Nakano, Go Narita, Noritaka Tsuchiya, Masat Imura, Motoaki Iwaya, Satoshi Kamiyama, Kenji Shimono, Tadashi Noro, Takashi Takagi, Hiro Amano, and Isamu Akasaki Resonant-Raman Scattering of ZnO Crystallites: The Quasi Nature of the LO Mode E11.5 Xiang-Bai Chen, John L. Morrison, Jesse Huso, Jonathan G. Metzger, Leah Bergman, and Shlomo Efrima Direct AFM Observation of Strain Effects on MOCVD-Grown GaN Epilayer Surface Morpholog E11.6 D.I. Florescu, D.S. Lee, J.C. Ramer, V.N. Merai, A. Parekh, D. Lu, E.A. Armour, and W.E. Qui Optical Characteristics of Amorphous III-V Nitride Thin Films E11.7 Jebreel M. Khoshman and Martin E. Kordesch High-Frequency Generation in Low-Mobility Superlattices E11.9 Vladimir Litvinov and Alexander Manasson Optimization of GaN Channel Conductivity in AlGaN/GaN HFET Structures Grown by MOVPE E11.11


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S.M. Hubbard, G. Zhao, D. Pavlidis, E. Cho, and W. Sutton Pressure Dependence of Elastic Constants in Wurtzite and Zinc-Blende Nitrides and Their Influence on the Optical Pressure Coefficients in Nitride Heterostructures E11.13 Slawomir P. Lepkowski and Jacek A. Majewski Modeling of Elastic, Piezoelectric and Optical Properties of Vertically Correlated GaN/AlN Quantum Dots E11.14 Slawomir P. Lepkowski, Grzegorz Jurczak, Pawel Dluzewski, and Tadeusz Suski Compositional Ordering in InxGa1-xN and Its Influence on Optical Properties E11.19 Z. Liliental-Weber, D.N. Zakharov , K.M. Yu, J. Wu, S.X. Li, J.W. Ager III, W. Walukiewicz, E.E Haller,H. Lu, and W. J. Schaff Transmission Electron Microscopy Study of an Epitaxial Gate Oxide on III-N Semiconductor Structures E11.21 Yoga.N. Saripalli, X-Q Liu, D.W. Barlage, M.A.L. Johnson, D. Braddock, N.A. Stoddard, and A Chugh Fabrication of Silicon Nitride Film Using Pure Nitrogen Plasma Generated Near Atmospheric Pressure for III-V Semiconductor Fabrication E11.23 R. Hayakawa, T. Yoshimura, M. Nakae, T. Uehara, A. Ashida, and N. Fujimura A Model for the Critical Height for Dislocation Annihilation and Recombination in GaN Column Deposited by Patterned Growth E11.29 M.E. Twigg, N.D. Bassim, C.R. Eddy, R.L. Henry, R.T. Holm, and M.A. Mastro Group III Nitrides Grown on 4H-SiC ( 3038 ) Substrate by Metal-Organic Vapor Phase Epitaxy E11.31 Akira Honshio, Tsukasa Kitano, Masataka Imura, Yasuto Miyake, Hideki Kasugai, Kazuyoshi I Takeshi Kawashima, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki, Hiro Kinoshita, and Hiromu Shiomi Electroluminescence From GaInN Quantum Wells Grown on Non-(0001) Facets on Selectively Grown GaN Stripes E11.32 Barbara Neubert, Frank Habel, Peter Brückner, Ferdinand Scholz, Till Riemann, and Jürgen Christen Growth and Characterization of Bulk GaN by Ga Vapor Transport E11.33 Phanikumar Konkapaka, Huaqiang Wu, Yuri Makarov, and Michael G. Spencer Self-Oriented Growth of GaN Films on Molten Gallium E11.34 Hongwei Li, Hari Chandrasekaran, Mahendra K Sunkara, Ramon Collazo, Zlatko Sitar, Michae Stukowski, and Krishna Rajan Electrical and Optical Properties of 1 MeV-Electron Irradiated AlxGa1-xN E11.35 Michael R. Hogsed, Mo Ahoujja, Mee-Yi Ryu, Yung Kee Yeo, James C. Petrosky, and Robert Hengehold Comparative Study of GaN Based Light Emitting Devices Grown on Sapphire and GaN Substr E11.36 Stephan Figge, Jens Dennemarck, Gabriela Alexe, and Detlef Hommel Relationship of Basal Plane and Prismatic Stacking Faults in GaN to Low Temperature Photoluminescence Peaks at ~3.4 eV and ~3.2 eV E11.37 J. Bai, M. Dudley, L. Chen, B.J. Skromme, P.J. Hartlieb, E. Michaels, J.W. Kolis, B. Wagner, R Davis, U. Chowdhury, and R.D. Dupuis


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Growth of GaN from Elemental Gallium and Ammonia via Modified Sandwich Growth Techniq E11.38 E. Berkman, R. Collazo, R. Schlesser, and Z. Sitar Scanning Electron Microscopy Cathodoluminescence Studies of Piezoelectric Fields in an InG Multiple Quantum Well Light Emitting Diode E11.41 Kristin L. Bunker, Roberto Garcia, and Phillip E. Russell Non-Polar GaN/AlN Superlattices on A-Plane AlN (500nm) Buffer Layers Grown by RF-MBE E11.43 Takayuki Morita, Akihiko Kikuchi, and Katsumi Kishino Optical Properties of II-IV-N2 Semiconductors E11.45 John Muth, Ailing Cai, Andrei Osinsky, Henry Everitt, Ben Cook, and Ivan Avrutsky Vapor-Liquid-Solid Growth of III-Nitride Nanowires and Heterostructures by Metal-Organic Chemical Vapor Deposition E12.4 J. Su, M. Gherasimova, G. Cui, J. Han, S. Lim, D. Ciuparu, L. Pfefferle, Y. He, A.V. Nurmikko, Broadbridge, A. Lehman, T. Onuma, M. Kurimoto, and S.F. Chichibu A Nucleation Study of GaN Multifunctional Nanostructures E12.7 Shalini Gupta, Hun Kang, Martin Strassburg, Ali Asghar, Jayantha Senawiratne, Nikolaus Diet and Ian T. Ferguson Effect of the Polar Surface on GaN Nanostructure Morphology and Growth Orientation E12.8 C.Y. Nam, D. Tham, and J.E. Fischer

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