Infrared picosecond superconducting single-photon ... - IEEE Xplore

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jinzhan(&.ece. rochester.edu. 0. Okunev, A. Korneev, P. Kouminov, ... The response time of NbN SSPDs is 400 ps and the system jitter is
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Infrared picosecond superconducting single-photon detectors for CMOS circuit testing J. Zhang, A. Pearlman, W. Slysz, A. Verevkin, and Roman Sobolewski Department ofElectrtca1 and Coinputer Engineering and Laboratoy ofLaser Energetics, Universiry ofRochester, Rochester, IVY 14627-0231. jinzhan(&.ece.rochester.edu

0. Okunev, A. Korneev, P. Kouminov, K. Smirnov, G. Chulkova, and G. N. Gol’tsman Department ofphysics. Moscow State Pedagogical University, Moscow 119435, Russia.

W. Lo and K. Wilsher NPTest Inc., /SO Ravfm‘i Drivc, S ~.;we. J C.4 95/i.+

Abstract: Novel, NbN superconducting single-photon detectors have been developed for ultrafast, high quantum efficiency detection of single quanta of infrared radiation. Our devices have been successfully implemented in a commercial VLSI CMOS circuit testing system. 02003 Optical Society of America OCIS codes: (040.5570) Quantum detectors; (040.3060) Infrared

We have developed novel, NbN-based, superconducting single-photon detectors (SSPDs) for non-contact testing and debugging of VLSI CMOS circuits. The SSPDs offer counting rates in excess of one GHz, a wide spectral response, and negligible dark counts [l, 21. Detectors are fabricated using electron beam lithography and reactive ion etching. 3.5-nm-thick epitaxial NbN films are patterned into 200-nm-wide NbN stripes covering a 10x10 pm2 active area in a meander pattern with the filling factor of up to 0.5. The SSPD operates at -5 K and its photoresponse mechanism is based on photon-induced resistive hotspot formation and subsequent appearance of a transient voltage pulse across the nanostructured superconducting stripe. The best devices reach quantum efficiencies of -5% at 1.55 pm and >lo% in the visible range. The response time of NbN SSPDs is 4 0 0 ps and the systemjitter is