cEpi R&D team, Samsung LED Co. Ltd., Suwon ... pulsed laser deposition (PLD) [6], chemical vapor depo- sition (CVD) .... mental absorption edge of the IZO thin films corresponds ... ergy and (B) EU vs. optical band gap for the IZO thin films.
Jan 25, 2012 - 2. The Printed circuit board (PCB) layout shown in Fig. 3. The ... We observe that as the grain size decreases the dislocation density increases. With the change in ... Methoxyethanol (purchased from Fluka) used to provide the.
May 12, 2016 - Department of Electronic Science, University of Delhi South Campus, Benito .... X-ray Diffraction' 2nd Ed., Addission-Wesley Publishing Company (1978). ... Myoung Lee, Taewoo Kim, Jong Ho Choi, Dong kyun Seo, Ji- Beom.
standard hydrogen electrode). The working and counter electrodes were placed parallel to each other separated by a distance of 1 cm. Thin films were obtained ...
Jan 5, 2012 - films for surface acoustic wave application. Sang-Hun ... metal-doped ZnO (M = Li, Ag) films were prepared by radio frequency magnetron sputtering on glass substrates .... 743 nm with increasing Li contents from 0 to 4 wt.%.
Mar 22, 2009 - [21] Tobias Enzenhofer, Thomas Unold, Roland Scheer, Hans-Werner Schock, Material ... [30] E.A. Fagan, H. Fritzsche,J. Non-Crystal. Solids 2 ...
unsuccessfully attempting to organize a NATO workshop in this area with H. Gislason and B. Wessels. ... sessions and over 200 in the joint session, were primarily from universities and selected .... R.F.C. Farrow, B.T. Jonker, R. Clarke, P. Griinberg
Jul 9, 2016 - which slightly differ by viscosity of precursors, applied voltages and ... water, 2-methoxyethanol [C3H8O2] (Sigma-Aldrich, assay ⥠99.5 %) ...
Gallium and aluminum co-doped zinc oxide (GAZO) films were produced by magnetron sputtering. The GAZO films were post-annealed in either vacuum or ...
Apr 19, 2011 - M. Godlewski. Department of Mathematics and Natural Sciences, College of Science, Cardinal Stefan Wyszynski University,. Warsaw, Poland.
Dec 12, 2016 - film transistors (TZO TFTs) fabricated on flexible plastic substrate at low ... film and TZO TFT can be a promising candidate for flexible displays.
The effect of nitrogen and electron beam irradiation on the electrical properties of ... cross linking, curing, grafting, and degradation. Ion beam irradiation is a well ...
Jun 7, 2017 - technique that requires less energy bill and which not need vacuum ..... [16] Chien-Yie Tsay, Hua-Chi Cheng, Yen-Ting Tung,. Wei-Hsing Tuan ...
Mar 12, 2013 - Author to whom correspondence should be addressed; E-Mail: [email protected];. Tel.: +52-55-5729-6000 (ext. 56092); Fax: ...
May 1, 2014 - Abstract: The effect of annealing in Ni doped Zinc oxide (ZnO) ... diffraction patterns reveal good crystalline quality without any appreciable ... analyses of the samples were performed using SEM ... increase of Ni atomic percentage in
Increased radiative lifetime of rare earth-doped zinc oxyhalide tellurite glasses. D. L. Sidebottoma) and M. A. Hruschka. Department of Chemical and Nuclear ...
May 26, 2008 - Beck, Stephen, University of Sheffield, UK. Ben Bouzid, Sihem ...... Summit R., Marley J. A., Borrelli N. F., J. Phys. Chem. Solids, 25, 1964, p.
Sep 19, 2012 - 32(1â2):33 â 177, 2004. [3] Howard Foster, Iram Ditta, Sajnu Varghese, and Alex .... [23] J B Mooney and S B Radding. Spray pyrolysis process ...
Jul 15, 2005 - 1Department of Materials Science and Engineering, National Defense Academy, ... indicated the decrease of free electrons originated in amorphous and the ... Keywords: thermoelectric, zinc oxide, thin film, amorphous, pulsed laser depos
Oct 14, 2010 - optical, and electrical properties of ZnO films were investigated. ... Keywords: Zinc Oxide, Polyethylene Terephthalate, Thermal evaporation, ...
case of GZO, 0â02 g of gallium nitrate is dissolved in a 0â25 g of DEA and then added to the zinc acetate dehydrate solution, where Ga/Zn = 1 mol%. The resulted.
Sep 5, 2011 - have used USP to fabricate IZO thin film, which were used in amorphous silicon ... Pauw method (Accent HL5500 PC). The surface morphology.
The molar ratio DEA/Zn was fixed at 1.0. The Gallium nitrate was dissolved in the solution to obtain ZnO:Ga solution. Gallium concentration was fixed at 3 at.%.
Dec 11, 2013 - ABSTRACT: Solution processed zinc tin oxide (ZTO) thin film transistors (TFTs) were fabricated by varying the ..... composition have the best performance. .... (15) Hwang, S.; Kim, Y. Y.; Lee, J. H.; Seo, D. K.; Lee, J. Y.; Cho, H.
Rare earth doped Zinc oxide thin films for optoelectronic ... ZnO emits in the red (Eu3+) and the yellow spectrum (Tb3+). The result is a white light resulting from.
Rare earth doped Zinc oxide thin films for optoelectronic applications Christian Davesnne 1 Ahmed Ziani 1, 2, * Julien Cardin 1 Christophe Labbe 1 Philippe Marie 1 Cédric Frilay 1 Patrick Voivenel 1 Laurence Méchin 3 Xavier Portier 1 1 CIMAP - UMR 6252 - Centre de recherche sur les Ions, les MAtériaux et la Photonique 2 CEA - Commissariat à l'énergie atomique et aux énergies alternatives 3 Equipe Electronique - Laboratoire GREYC - UMR6072 GREYC - Groupe de Recherche en Informatique, Image, Automatique et Instrumentation de Caen Abstract : In the field of optoelectronic materials, Zinc oxide thin films are interesting due to their excellent electronic and optical properties. It is also inexpensive and environmentally safe. Zinc oxide, electrically excited, emits in the blue/green spectral region. By Stark effect, rare earths doped ZnO emits in the red (Eu3+) and the yellow spectrum (Tb3+). The result is a white light resulting from the recombination of these three emissions created in the ZnO matrix. The intended application is the manufacture of a light-emitting diode LED based on rare earth doped zinc oxide (RE : ZnO) emitting white light. In the present study, rare earth (Eu / Tb) doped ZnO thin films were grown by radiofrequency magnetron sputtering using a ZnO target. Doping is obtained by arranging calibrated europium oxide and/or terbium oxide (Eu2O3 / Tb4O7) pellets on the surface of the ZnO target. Depositions were performed at substrate temperature between room temperature RT and 500°C on Silicon (Si) and Sapphire (Al2O3) substrates, using different RF power and different target-substrate distances. Chemical analysis by EDX showed an atomic doping level between 1 to 5 % according to the experimental conditions during deposition. The structural properties of these films by X-ray diffraction XRD and transmission electron microscopy TEM show that the films are highly c-axis oriented but the increase of doping tends to deteriorate the crystalline orientation. The optical properties of the doped films are presented. The electrical properties are also explored as a function of the rare earth concentration.
European Workshop on nano Transparent Conductive Materials, Jun 2012, Grenoble, France
