Significantly improved efficiency of organic solar cells

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Significantly improved efficiency of organic solar cells incorporating Co3O4 NPs in the active layer S. Amber Yousaf, M. Ikram & S. Ali

Applied Nanoscience ISSN 2190-5509 Appl Nanosci DOI 10.1007/s13204-018-0726-8

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Author's personal copy Applied Nanoscience https://doi.org/10.1007/s13204-018-0726-8

ORIGINAL ARTICLE

Significantly improved efficiency of organic solar cells incorporating ­Co3O4 NPs in the active layer S. Amber Yousaf1 · M. Ikram1   · S. Ali1,2 Received: 27 October 2017 / Accepted: 14 March 2018 © Springer-Verlag GmbH Germany, part of Springer Nature 2018

Abstract Effect of various concentrations of fabricated cobalt oxide ­(Co3O4) nanoparticles (NPs) in the active layer of different donors and acceptors based hybrid organic bulk heterojunction-BHJ devices were investigated using inverted architecture. The organic active layer comprising different donors P3HT (poly(3-hexylthiophene-2,5-diyl) and PTB7 (Poly[[4,8-bis[(2ethylhexyl)oxy]benzo[1,2-b:4,5-b′]dithiophene-2,6-diyl][3-fluoro-2-[(2-ethylhexyl)carbonyl]thieno[3,4-b] thiophenediyl]] [6,6]) and acceptor (phenyl-C-butyric acid methyl ester ­(PC60BM and ­PC70BM) materials. The incorporation of NPs in the binary blends of P3HT:PC60BM and PTB7:PC70BM enhanced the power conversion efficiency (PCE) of resulting ternary devices. This increase in PCE is mostly due to decrease in series resistance (Rs) with an optimum amount of ­Co3O4 in the organic photoactive layer. It was found that the ternary blend has higher absorbance relative to a binary blend of P3HT:PCBM. Addition of NPs in the active materials blend increased film roughness and form interpenetrating network to facilitate charges transportation in the active layer. The higher amount of NPs enhanced agglomerations which caused to break down the BHJ led to decrease the performance of the ternary devices. Keywords  Active layer · P3HT · PTB7 · Film roughness · Co3O4 · Absorbance

Introduction In view of the rapidly declining natural reserves of energy, the most desirable goal of modern science is perhaps yoking clean and freely available solar energy in the most resourceful, vigorous, and cost-effective manner, on a large scale (Lee et al. 2008; Bhalla and Tyagi 2016). Because of nontoxic materials, tunable optical and electronic properties, mechanical flexibility, solution processing, colorful and lightweight (Kozma et al. 2013; Zhou et al. 2014; Lin et al. 2017); organic photovoltaics (OPVs) have attracted a great interest in research since last two decades. If developed into a mature technology, OPVs offer new horizons of how to produce and use energy. In preceding years many conjugated * M. Ikram [email protected] 1

Solar Cell Applications Research Lab, Department of Physics, Government College University, Lahore 54000, Punjab, Pakistan



Department of Physics, Riphah Institute of Computing and Applied Sciences (RICAS), Riphah International University, 14 Ali Road, Lahore 54000, Punjab, Pakistan

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polymers such as P3HT, PTB7, (PCDTBT)-poly[[4,8-bis[(2ethylhexyl)oxy]benzo[1,2-b:4,5-b′]dithiophene-2,6-diyl] [3-fluoro-2-[(2-ethylhexyl) carbonyl] thieno[3,4-b] thiophenediyl]], (PCPDTBT)-Poly[2,6-(4,4-bis-(2-ethylhexyl)-4Hcyclopenta [2,1-b;3,4-b′] dithiophene)-alt-4,7 (2,1,3-benzothiadiazole)], (TBTIT)-thieno[3,2-b][1]benzothiophene Isoindigo thiophene (Kadem et al. 2016; Etxebarria et al. 2014; Zhang et  al. 2016; Ahmad et  al. 2017; Yue et  al. 2015) etc., have been employed in OPVs with fullerene and non-fullerene based acceptors (Ganesamoorthy et al. 2017; Liang et al. 2017). Although the devices demonstrate excellent power conversion efficiencies (PCEs) for single junction devices (~ 10%) and tandem devices (~ 11%) (Zhang et al. 2015; Chen et al. 2014) but PCE relative to conventional silicon-based solar cells is still very low. These low PCEs are owed to amorphous nature, low carrier mobility and short exciton diffusion length of the organic materials employed in devices (Ikram et al. 2015a; Tian et al. 2017). To minimize these issue, transition metal oxides (TMO) have been widely studied accredit to their properties and applications in electronics and optoelectronics (Abdullah et al. 2014; Greiner et al. 2011; Bera and Saha 2016). The merger of conjugated polymers and TMOs in

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organic–inorganic hybrid solar cells (HSC) (Zhong et al. 2012) uses the advantages of both types of materials. Inorganic part of the ternary devices, having an ideal band gap, high electron mobility, environmentally stable and friendly; enhance absorption, facilitates charges in the active layer and support to overcome photodegradation (Wright and Uddin 2012; Beek et al. 2004). Various research groups used NPs in the polymer active layer with different architecture as CdS NPs in PTB7:PCBM based inverted devices increased PCE from 6.30 to 7.01% (Sharma et al. 2016). Many TMOs such as ZnO, ­TiO2, CuO, NiO, ­SnO2, PbS, CdSe have been employed in the active layer of OSCs with different morphologies that improved the PCE from 15 to 47% of (Gong et al. 2010; Yang et al. 2010; Jotterand and Jobin 2011; Fu et al. 2012; Oh et al. 2013; Yoon et al. 2013; Wanninayake et al. 2015). These NPs have also been used to replace P3HT or PCBM in ternary and quaternary blend based devices to lower the cost and efficient solar cells (Yang et al. 2013b; Ikram et al. 2015a, b, 2016). In this research, the influence of mixing ­C o 3O 4 in P3HT:PCBM and PTB7:PCBM based devices were prepared using dichlorobenzene (DCB) and chlorobenzene (CB) as solvent, respectively. C ­ o3O4 being p-type semiconductor, non-toxic, and abundant relative to other is one of the most favorable metal oxide in technological fields (Mahmoud 2016; Allaedini and Muhammad 2013). ­Co3O4 can be considered as a potential candidate in photovoltaic (PV) research due to its two visible range optical band gaps, i.e., 1.5 and 2.2 eV (Majhi et al. 2016). It has been reported that ­Co3O4 had been used as a light absorber and also as a hole transporting layer in all-oxide PV and polymer solar cells, respectively (Kupfer et al. 2015; Wang et al. 2015).

Experimental details

impurities. The washed precipitates were dried by aging at 60 °C for 48 h:

CoCl3 + 3NaOH → Co(OH)3 + 3NaCl. Dried Co(OH)3 was further heated in a muffle furnace at 400 °C with a ramp rate of 10 °C/min for 60 min:

Co(OH)3 → Co2 O3 + H2 O 3Co2 O3 + H2 O → 2Co3 O4 + H2 O.

Device fabrication The ITO substrates were cleaned prior to use with acetone and iso-propanol (IPA). To deposit zinc oxide (ZnO) layer, ZnO NPs were diluted with IPA (1:1). The diluted NPs solution was spin coated on cleaned ITO at 5000 rpm/45 s and heated at 150 °C/20 min. The hybrid polymers and nanocomposite-based solutions were prepared by dissolving P3HT, ­PC60BM and PTB7, ­PC70BM in DCB and CB with 1:0.8 and 1:1.5 M, respectively, to achieve 36 mg/ml. Solutions were stirred for 24 h at 70 °C prior to use for device fabrication. ­Co3O4-NPs were dispersed in DCB, CB separately and added to the polymer solutions with different wt. ratio (1, 2, 3, 4 and 5) %. The different ratios of photoactive solutions were spun cast on ZnO coated ITO substrates at 1500 rpm for 1-min. The P3HT:PCBM based devices were heated at 70 °C for 15 min. Finally, a thin layer of ­MoO3 (thickness—10 nm) and Ag (thickness—100 nm) back contact were deposited at high vacuum ­(10−7 mbar) by the thermal evaporator. Hereafter, the inverted devices structures ITO/ZnO/ P3HT:Co3O4:PC60BM/MoO3/Ag are labeled as 0%—D1, 1%—D2, 2%—D3, 3%—D4, 4%—D5 and ITO/ZnO/ PTB7:Co3O4:PC70BM/MoO3/Ag are labeled as 0%—D6, 1%—D7, 2%—D8, 3%—D9, 4%—D10.

Characterizations

Materials Indium-doped tin oxide (ITO) (8–12 Ω) coated glass substrates were obtained from Delta Technologies, USA. N11 ZnO NPs (8–16 nm) were received from Sigma-Aldrich. P3HT was purchased from Ossila, UK and PTB7 from one-material. PCBM of 99.99% purity was received from Solenne and cobalt chloride (­ CoCl3) was purchased from Sigma-Aldrich (99.99%). Sodium hydroxide (NaOH— 99.9%) was purchased from Panreac.

Synthesis of ­Co3O4 nanoparticles Co3O4-NPs were prepared by mixing an aqueous solution of ­CoCl3 and NaOH under vigorous stirring at room temperature. Dark green precipitates of Co(OH)2 were collected and washed several times with distilled water to remove

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Structural and phase information of ­Co3O4 NPs was collected using X-ray diffractometer (XRD) (model: PAN Analytical X’pert PRO) with Cu-Kα radiation (1.54 Å) and 2θ values (25°–75°). solar simulator CT 100 AAA under AM 1.5 G with 1000 W/cm2 irradiation intensity and Keithley 2420 source meter unit were used to evaluate electrical parameters. Optical absorption profiles of NPs as well as films were obtained by UV–visible spectrophotometer (model: Genesys 10S). Ambios Multimode Microscope (AFM) and Hitachi S4160 were deployed to check the microstructure, roughness and morphology of the films. External quantum efficiency (EQE) measurements were recorded via QEX 10PV.

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Results and discussion

Fig. 1  XRD pattern of ­Co3O4 nanoparticles

Fig. 2  SEM Images of C ­ o3O4 nanoparticles

XRD pattern of annealed cobalt oxide is shown in Fig. 1. The observed peaks are identified and well matched by JCPDS card no. 01-080-1545, showing the absence of impurity in the prepared sample. The C ­ o3O4 exists in cubic nature (a = b = c = 8.1691  Å, α = β = γ 90°) belonging to space group Fd-3m. The peak positions appear at 2θ° = 31.29°, 36.82°, 44.81°, 55.62°, 59.32° and 65.25° are indexed to the corresponding planes (220), (311), (400), (422), (511) and (440) respectively. The calculated average crystallite size related to these peaks found to vary between 15 and 25 nm by Debye–Scherrer’s formula. To check the morphology of ­Co3O4 NPs scanning electron microscopy (SEM) was used as shown in Fig. 2. The image shows the formation of small and large clusters of ­Co3O4 NPs. Inset pinpoints few spherical structures of NPs have particle size between 29.3 and 36.7 nm. The absorption spectrum of ­Co3O4 NPs was obtained by UV–Vis spectroscopy as shown in Fig. 3a. From absorption spectra, the absorption peaks of ­Co3O4 are around 485 and 780 nm Fig. 3a. These are associated with the charge transfer from O ­ 2− → Co2+ and O ­ 2− → Co3+, respectively (Farhadi et al. 2013; Makhlouf et al. 2013; Salavati-Niasari and Khansari 2014). The calculated band gaps of C ­ o3O4-NPs were around 1.3 and 2.0 nm using Tauc plot (Fig. 3b). Figure 4a, b represent the energy band diagram of the prepared devices with inverse geometry. To ensure high exciton dissociation and charge transfer, the energy levels of the active materials should be aligned (Stylianakis et al. 2017). In these devices system, the energy levels of ­Co3O4 NPs (conduction band = 4.2  eV, valance band = 6.1  eV, band gap = 1.3 eV) matches well with active layer polymers donor (D) and acceptor (A) based systems in this study and believed will participate to improve device parameters (Sharma et al. 2016; Zhang et al. 2014; Wu et al. 2013; Kim et al. 2007). Open circuit voltage (Voc) of the device

Fig. 3  a UV–Vis spectrograph of ­Co3O4, b bandgap calculation for ­Co3O4 nanoparticles

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Fig. 4  a Skeleton of inverted device structure. b Energy band diagram of P3HT:Co3O4:PCBM. c PTB7: C ­ o3O4:PCBM

profoundly depends on the band position of active materials ­(LUMOA–HOMOD). In ternary devices, conduction band of NPs can effectively change the upper limit of Voc (Gershon 2011). Upon light incidence, excitons generated in the photoactive layer are separated at “D-A” interface. In this structure, holes-h+ move towards ­MoO3/Ag while electrons ­(e−s) have two paths to approach ITO, either travel through PCBM or higher electron motility NPs. The possible pathways for ­e−s transport are P3HT/PTB7:PCBM, P3HT/PTB7:Co3O4 Fig. 5  J–V graphs a P3HT:Co3O4:PCBM. b PTB7:Co3O4:PCBM

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and ­Co3O4:PCBM may enhance the charge separation and transportation (Ikram et al. 2015a, b, c, d). Furthermore, once ­e−s are injected to ETL, the appropriate energy levels of ZnO collects ­e−s and block holes. The current density (Jsc) vs voltage (V) characteristics of binary (P3HT/PTB7:PCBM) and ternary (P3HT/ PTB7:Co3O4:PC60BM/PC70BM) system based devices are presented in Fig. 5a, b. Electrical parameters extracted from J–V curves under one sun are summarized in Table 1. Upon

Author's personal copy Applied Nanoscience Table 1  J–V data of P3HT:Co3O4:PCBM and PTB7:Co3O4:PCBM based inverted devices Devices

Jsc (mA/cm2)

Voc (V)

FF (%)

PCE (%)

Rs (Ω-cm2)

D1 D2 D3 D4 D5 D6 D7 D8 D9 D10

8.82 8.94 9.29 9.20 8.66 15.23 15.39 15.43 15.17 14.83

0.56 0.57 0.58 0.57 0.55 0.71 0.71 0.71 0.71 0.71

59 61 63 61 58 56 57 60 57 56

2.91 3.10 3.39 3.19 2.76 6.05 6.22 6.57 6.13 5.89

2.85 2.55 2.37 2.52 4.25 3.40 3.29 3.20 2.74 3.56

mixing of NPs, an increase in fill factor (FF) and Jsc was found lead up PCEs from 2.91 to 3.39% and 6.05–6.57% for D1–D3 and D6–D8, respectively. A significant increase in FF was observed with the addition of ­Co3O4-NPs in the P3HT and PTB7 based devices. Presence of NPs form percolation network in active layer which facilitates charge transfer due to high electron mobility at “D-A” interfaces causing a decrease in series resistance (Rs) and increase in Jsc (Lin et al. 2013; Yang et al. 2013a; Ikram et al. 2015c). For PTB7 based devices, Rs decreases but no appreciable change in Jsc was found which suggests absorption of the higher amount of ­PC70BM relative to PTB7 (1.5:1) dominate C ­ o3O4. Likewise, Voc for the D1–D3 increases due to the energy level alignment between HOMO of “D” and LUMO of “A” in the presence of Ec of NPs (Ikram et al. 2014; Feng et al.

Fig. 6  SEM images of P3HT:Co3O4:PC60BM (D1–D5) and PTB7:Co3O4:PC70BM (D6–D10)

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Fig. 7  AFM images of P3HT:Co3O4:PCBM (D1–D5) and PTB7:Co3O4:PCBM (D6–D9)

2014). For PTB7 based devices (D6–D10) exhibit constant Voc as doping might be acting as electrons cascade (Sharma et al. 2016). The decrease in Rs and increase in Jsc, FF and Voc were observed with small amount (2%) of ­Co3O4 in the active layer, beyond this ratio trend reverse due to the aggregation of NPs that breaks down the BHJ structure and removes percolation network (Ikram et al. 2014). Figure 6 represents the SEM images of the films with and without C ­ o3O4 NPs. A smooth surface can be observed for the binary system film (Fig. 6, D1 and D6). Incorporation of NPs in the active layer demonstrates the formation of percolation network for ternary blend films marked with red circles in Fig. 6, D3 and D8). With the optimum amount, NPs link the PCBM domain causing increased mobility and reduced resistance of the devices. However, at higher concentrations, small and large agglomeration of NPs are formed which are distributed randomly on film

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surface (Fig. 6, D5 and D10). The presence of agglomerates discontinues the favorable percolation network and breaks down the BHJ. This results in a decreased Jsc (Table 1) as agglomerates also act as recombination centers/charge traps and limits the charge collection (Ikram et al. 2016). Active layer morphology plays a crucial role in OSCs performance, therefore, to further investigate the effect of ­Co3O4 NPs to polymer active layer, the micromorphology and film roughness of binary and ternary systems were performed using atomic force microscopy (AFM) as shown in Fig. 7. For control devices Fig. 7, D1 and D6, film surfaces are smooth with root mean square (RMS) value 3.21 and 2.1  nm, respectively. Conjugation of NPs increased the roughness of films relative to NPs free films (Fig. 7, D2–D5, D7–D9) with RMS values 7.16, 8.27, 10.84, 11.5 nm and 2.7, 3.04, 3.84 nm, respectively. Increase in roughness corresponds to the formation of small and large agglomerates with ­Co3O4 resulting in charge transport distance reduction

Author's personal copy Applied Nanoscience Fig. 8  UV-Vis absorption spectra of films a P3HT:Co3O4: PCBM. b PTB7:Co3O4:PCBM

Fig. 9  EQE profile a P3HT:Co3O4:PCBM. b PTB7:Co3O4:PCBM

and photocurrent increment. However, larger agglomerates of NPs cause phase separation and removes pathways for charge carriers Fig. 7, D5 (Imran et al. 2017). Figure 8a, b illustrate UV–Vis absorption spectra of the binary and ternary blend based films. With the increasing amount of C ­ o3O4 NPs, an increase in absorption was observed Fig. 8, D2–D5 and D7–D10. This increment in the visible region is attributed to C ­ o3O4 absorption as it has band gap energies 1.3 and 2 eV (Fig. 3a). The higher surface roughness of the films lead to stronger scattering of light which predominantly enhanced absorption in the visible region (Lim et al. 2017). Relative to binary films, ternary blend films show higher and wide range of absorption with the addition of ­Co3O4-NPs but for PTB7:PCB70M system, strong absorption is occurring around 400–500 nm indicating that PCBM dominates ­Co3O4-NPs. Thus, absorption spectrum supports the argument that increase in Jsc is basically due to the better morphology. The measured external quantum efficiency (EQE) of binary and ternary devices are shown in Fig. 9a, b. Inverted

OSCs based devices P3HT:PC60BM and PTB7:PC70BM show broad and strong response from 390 to 625  nm and 400–725 nm, respectively. An increase in EQE with the incorporation of ­C o 3O 4 in the P3HT:PC 60BM and PTB7:PC70BM blend devices were observed. This increase is credited to increase in absorption with the NPs incorporation in the different polymer-based devices.

Conclusion Various concentrations of C ­ o3O4 NPs were incorporated into the active layers of P3HT:PCB60M and PTB7:PC70BM based inverted BHJ solar cells dissolved in CB and DCB as solvents. Mixing of the optimum amount of ­Co3O4 in the polymer binary blend devices enhanced PCE from 2.91 to 3.39% and 6.05–6.57%, respectively. Increase in PCE of the ternary system was mostly due to decrease in Rs correspond to increase in FF. Addition of NPs increased the surface roughness and also provides pathways for charges to

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transport in active layer towards their respective electrodes. Device performance of ternary system increased with optimum amount of C ­ o3O4 NPs and this benefit reverse with higher concentration of NPs. The higher concentrations of metal oxides in the active layers showed agglomerations thus lower the device efficiency. Acknowledgements  The authors thankful to higher education commission (HEC), Pakistan for financial support through PAK-US joint Project.

Compliance with ethical standards  Conflict of interest  The authors confirm that this manuscript has no conflict of interest.

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