Solar cell efficiency tables (Version 38) - Wiley Online Library

PROGRESS IN PHOTOVOLTAICS: RESEARCH AND APPLICATIONS Prog. Photovolt: Res. Appl. 2011; 19:565–572 Published online in Wiley Online Library (wileyonlinelibrary.com). DOI: 10.1002/pip.1150

RESEARCH: SHORT COMMUNICATION: ACCELERATED PUBLICATION

Solar cell efficiency tables (Version 38) Martin A. Green1*, Keith Emery2, Yoshihiro Hishikawa3, Wilhelm Warta4 and Ewan D. Dunlop5 1 2

ARC Photovoltaics Centre of Excellence, University of New South Wales, Sydney 2052, Australia National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, CO 80401, USA

3

National Institute of Advanced Industrial Science and Technology (AIST), Research Center for Photovoltaics (RCPV), Central 2, Umezono 1-1-1, Tsukuba, Ibaraki 305-8568, Japan

4

Fraunhofer-Institute for Solar Energy Systems, Department of Solar Cells – Materials and Technology, Heidenhofstr. 2, D-79110 Freiburg, Germany

5

European Commission – Joint Research Centre, Renewable Energy Unit, Institute for Energy, Via E. Fermi 2749, IT-21027 Ispra (VA), Italy

ABSTRACT Consolidated tables showing an extensive listing of the highest independently confirmed efficiencies for solar cells and modules are presented. Guidelines for inclusion of results into these tables are outlined and new entries since January, 2011 are reviewed. Copyright # 2011 John Wiley & Sons, Ltd. KEYWORDS solar cell efficiency; photovoltaic efficiency; energy conversion efficiency *Correspondence Martin A. Green, ARC Photovoltaics Centre of Excellence, University of New South Wales, Sydney 2052, Australia. E-mail: [email protected] Received 23 May 2011

1. INTRODUCTION Since January, 1993, ‘‘Progress in Photovoltaics’’ has published six monthly listings of the highest confirmed efficiencies for a range of photovoltaic cell and module technologies [1–3]. By providing guidelines for the inclusion of results into these tables, this not only provides an authoritative summary of the current state-of-the-art but also encourages researchers to seek independent confirmation of results and to report results on a standardized basis. In a recent version of these Tables (Version 33) [2], results were updated to the new internationally accepted reference spectrum (IEC 60904-3, Ed. 2, 2008), where this was possible. The most important criterion for inclusion of results into the Tables is that they must have been measured by a recognized test centre listed elsewhere [1]. A distinction is made between three different eligible areas: total area, aperture area, and designated illumination area [1]. ‘‘Active area’’ efficiencies are not included. There are also certain minimum values of the area sought for the different device types (above 0.05 cm2 for a concentrator cell, 1 cm2 for a 1-sun cell, and 800 cm2 for a module) [1]. Copyright ß 2011 John Wiley & Sons, Ltd.

Results are reported for cells and modules made from different semiconductors and for sub-categories within each semiconductor grouping (e.g., crystalline, polycrystalline, and thin film). From Version 36 onwards, spectral response information is included when available in the form of a plot of the external quantum efficiency (EQE) versus wavelength, normalized to the peak measured value. Starting from the present version, current–voltage (IV) curves will also be included when possible.

2. NEW RESULTS Highest confirmed ‘‘one sun’’ cell and module results are reported in Tables I and II. Any changes in the Tables from those previously published [3] are set in bold type. In most cases, a literature reference is provided that describes either the result reported or a similar result. Table I summarizes the best measurements for cells and submodules while Table II shows the best results for modules. Table III contains what might be described as ‘‘notable exceptions.’’ While not conforming to the requirements to be recognized as a class record, the cells and modules in this Table have notable characteristics that will be of 565

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Solar cell efficiency tables

Table I. Confirmed terrestrial cell and submodule efficiencies measured under the global AM1.5 spectrum (1000 W/m2) at 258C (IEC 60904-3: 2008, ASTM G-173-03 global). Classificationa

Silicon Si (crystalline) Si (multicrystalline) Si (thin film transfer) Si (thin film submodule) III–V cells GaAs (thin film) GaAs (multicrystalline) InP (crystalline) Thin film chalcogenide CIGS (cell) CIGS (submodule) CdTe (cell) Amorphous/nanocrystalline Si Si (amorphous)

Effic.b (%)

Voc (V)

Areac (cm2)

Jsc FFd (mA/cm2) (%)

Test Centree (and date)

Description

25.0 0.5 20.4 0.5 19.1 W 0.4 10.5 0.3

4.00 1.002 3.983 94.0

0.706 0.664 0.650 0.492i

42.7f 38.0 37.8h 29.7i

82.8 Sandia (3/99)g 80.9 NREL (5/04)g 77.6 FhG-ISE (2/11) 72.1 FhG-ISE (8/07)g

28.1 W 0.8 18.4 0.5 22.1 0.7

0.998 (ap) 1.111 4.011 (t) 0.994 4.02 (t) 0.878

29.4h 23.2 29.5

85.9 79.7 85.4

19.6 0.6j 16.7 0.4 16.7 0.5j

0.996 (ap) 0.713 16.0 (ap) 0.661i 1.032 (ap) 0.845

34.8k 33.6i 26.1

79.2 NREL (4/09) 75.1 FhG-ISE (3/00)g 75.5 NREL (9/01)g

NREL, CIGS on glass [18] U. Uppsala, 4 serial cells [19] NREL, mesa on glass [20]

10.1 0.3l

1.036 (ap)

0.886

16.75f

67.0

10.1 0.2m

1.199 (ap)

0.539

24.4

76.6

JQA (12/97)

Oerlikon Solar Lab, Neuchatel [21] Kaneka (2 mm on glass) [22]

10.9 W 0.3n 9.9 0.4n

1.008(da) 0.736 17.11 (ap) 0.719i

21.7h 19.4i,k

68.0 71.4

AIST (1/11) AIST (8/10)

Sharp [6] Sony, eight parallel cells [23]

(da) (ap) (ap) (ap)

UNSW PERL [13] FhG-ISE [14] ISFH (43 mm thick) [4] CSG Solar (1–2 mm on glass; 20 cells) [15]

NREL (3/11) Alta Devices [5] NREL (11/95)g RTI, Ge substrate [16] NREL (4/90)g Spire, epitaxial [17]

NREL (7/09)

Si (nanocrystalline) Photochemical Dye-sensitized Dye-sensitized (submodule) Organic Organic polymer Organic (submodule) Multijunction devices GaInP/GaAs/Ge GaAs/CIS (thin film)

8.3 0.3n 3.5 0.3n

1.031 (ap) 208.4 (ap)

0.816 8.620

14.46k 0.847

70.2 48.3

NREL (11/10) NREL (7/09)

Konarka [24] Solarmer [25]

32.0 1.5m 25.8 1.3m

3.989(t) 4.00 (t)

2.622 –

14.37 –

85.0 –

NREL (1/03) NREL (11/89)

a-Si/nc-Si/nc-Si (thin film) a-Si/nc-Si (thin film cell)

12.4 W 0.7o 11.9 0.8p

1.050 (ap) 1.936 1.227(ap) 1.346

8.96 12.92k

71.5 68.5

NREL (3/11) NREL (8/10)

5.462

2.99

71.3

AIST (9/04)

Spectrolab (monolithic) Kopin/Boeing (four terminal) [26] United Solar [7] Oerlikon Solar Lab, Neuchatel [27] Kaneka (thin film) [28]

1.733

8.03k

59.5 FhG-ISE (10/10)

a-Si/nc-Si (thin film submodule) Organic (two-cell tandem) a

11.7 0.4m,q 14.23 (ap) 8.3 0.3n

1.087 (ap)

Heliatek [29]

CIGS, CuInGaSe2; a-Si, amorphous silicon/hydrogen alloy.

b

Effic., efficiency.

c

(ap), aperture area; (t), total area; (da), designated illumination area.

d

FF, fill factor.

e

FhG-ISE, Fraunhofer Institut fu¨r Solare Energiesysteme; JQA, Japan Quality Assurance; AIST, Japanese National Institute of Advanced Industrial Science

and Technology. f

Spectral response reported in Version 36 of these Tables.

g

Recalibrated from original measurement.

h

Spectral response and current-voltage curve reported in present version of these Tables.

i

Reported on a ‘‘per cell’’ basis.

j

Not measured at an external laboratory.

k l


Light soaked at Oerlikon prior to testing at NREL (1000 h, 1 sun, 508C).

m

Measured under IEC 60904-3 Ed. 1: 1989 reference spectrum.

n

Stability not investigated. Refs. [30,31] review the stability of similar devices.

o

Light soaked under 100 mW/cm2 white light at 508C for over 1000 h.

p

Stabilized by 1000 h, 1 sun illumination at a sample temperature of 508C.

q

Stabilized by 174 h, 1 sun illumination after 20 h, 5 sun illumination at a sample temperature of 508C.

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Prog. Photovolt: Res. Appl. 2011; 19:565–572 ß 2011 John Wiley & Sons, Ltd. DOI: 10.1002/pip

M. A. Green et al.

Solar cell efficiency tables

Table II. Confirmed terrestrial module efficiencies measured under the global AM1.5 spectrum (1000 W/m2) at a cell temperature of 258C (IEC 60904-3: 2008, ASTM G-173-03 global). Classificationa

Effic.b (%)

Areac (cm2)

Voc (V)

Isc (A)

FFd (%)

Si Si Si Si

22.9 0.6 21.4 0.6 17.8 W 0.4 8.2 0.2

778 (da) 15 780 (ap) 14 920 (ap) 661(ap)

5.60 68.6 38.86 25.0

3.97 6.293 9.04f 0.320

80.3 78.4 75.7 68.0

Sandia NREL ESTI Sandia

(9/96)e (10/09) (2/11) (7/02)e

12.69 28.24 31.2 94.1 4.353

1.98f 7.254g 2.18 1.27 3.285

77.1 72.5 68.9 71.4 66.0

NREL NREL NREL NREL NREL

(4/11) (11/10) (8/02)e (1/11) (10/98)e

(crystalline) (large crystalline) (multicrystalline) (thin-film polycrystalline)

GaAs (crystalline) CIGS CIGSS (Cd free) CdTe a-Si/a-SiGe/a-SiGe (tandem) a

21.1 W 0.6 15.7 0.5 13.5 0.7 12.8 W 0.4 10.4 0.5h,i

921 9703 3459 6687 905

(ap) (ap) (ap) (ap) (ap)

Description

UNSW/Gochermann [32] SunPower [33] Q-Cells (60 serial cells) [8] Pacific Solar (1–2 mm on glass) [34] Alta Devices [5] Miasole [35] Showa Shell [36] PrimeStar monolithic [9] USSC [37]

CIGSS, CuInGaSSe; a-Si, amorphous silicon/hydrogen alloy; a-SiGe, amorphous silicon/germanium/hydrogen alloy.

b


c

(ap), aperture area; (da), designated illumination area.

d

FF, fill factor.

e


f

Spectral response and current–voltage curve reported in present version of these Tables.

g


h

Light soaked at NREL for 1000 h at 508C, nominally 1-sun illumination.

i

Test Centre (and date)

Measured under IEC 60904-3 Ed. 1: 1989 reference spectrum.

Table III. ‘‘Notable Exceptions’’: ‘‘Top ten’’ confirmed cell and module results, not class records measured under the global AM1.5 spectrum (1000 W/m2) at 258C (IEC 60904-3: 2008, ASTM G-173-03 global). Classificationa

Effic.b (%)

Cells (silicon) Si (MCZ crystalline)

Areac (cm2)

24.7 0.5

Voc (V)

4.0 (da) 0.704

Jsc FF (mA/cm2) (%)

42.0


Sandia (7/99)d UNSW PERL, SEH MCZ substrate [38] 82.9 NREL (5/10) Sunpower n-type CZ substrate [39] 80.0 AIST (2/09) Sanyo HIT, n-type substrate [40] 76.7 FhG ISE (3/11) Q-Cells, laser fired contacts [8]

83.5

Si (large crystalline)

24.2 0.7

155.1(t)

0.721

40.5e

Si (large crystalline)

23.0 0.6

100.4(t)

0.729

39.6

Si (large multicrystalline)

19.5 W 0.4

242.7(t)

0.652

39.0f

Cells (others) GaInP/GaAs/GaInAs (tandem) CIGS (thin film)

35.8 1.5 20.3 0.6

0.880 (ap) 3.012 0.5015 (ap) 0.740

13.9 35.4e

85.3 AIST (9/09) 77.5 FhG-ISE (6/10)

0.4362 (ap) 0.27 (da) 0.219 (ap) 25(ap)

28.6f 9.11 21.0 8.84e

65.4 68.4 72.2 79.5

CZTSS (thin film) a-Si/nc-Si/nc-Si (tandem) Dye-sensitized Luminescent submodule a

9.7 W 0.3 12.5 0.7g 11.2 0.3h 7.1 0.2h

0.516 2.010 0.736 1.008

Description

Sharp, monolithic [41] ZSW Stuttgart, CIGS on glass [42] NREL (8/09) IBM solution grown [10] NREL (3/09) United Solar stabilized [43] AIST (3/06)d Sharp [44] ESTI (9/08) ECN Petten, GaAs cells [45]

CIGS, CuInGaSe2; CZTSS, Cu2ZnSnS4 ySey.

b


c

(ap), aperture area; (t), total area; (da), designated illumination area.

d


e


f

Spectral response and current-voltage curve reported in the present version of these Tables.

g

Light soaked under 100 mW/cm2 white light at 508C for 1000 h.

h

Stability not investigated.


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Table IV. Terrestrial concentrator cell and module efficiencies measured under the ASTM G-173-03 direct beam AM1.5 spectrum at a cell temperature of 258C. Effic.a (%)

Areab (cm2)

Intensityc (suns)


29.1 1.3d,e 27.6 1.0f

0.0505 (da) 1.00 (da)

117 92

FhG-ISE (3/10) FhG-ISE (11/04)

43.5 W 2.6

0.3124 (ap)

418

NREL (3/11)

Solar Junction, triple cell [11]

41.6 2.5e

0.3174(da)

364

NREL (8/09)

Spectrolab, lattice-matched [47]

38.5 1.9g 27.0 1.5h

0.202 (ap) 34 (ap)

20 10

NREL (8/08) NREL (5/00)

DuPont et al., split spectrum [48] ENTECH [49]

20.5 0.8d

1875 (ap)

79

Sandia (4/89)i

Sandia/UNSW/ENTECH (12 cells) [50]

21.7 0.7

20.0 (da)

11

Sandia (9/90)i

UNSW laser grooved [51]

Classification

Single Cells GaAs Si Multijunction cells GaInP/GaAs/GaInNAs (2-terminal) GaInP/GaInAs/Ge (2-terminal) Submodules GaInP/GaAs; GaInAsP/GaInAs GaInP/GaAs/Ge Modules Si ‘‘Notable Exceptions’’ Si (large area) a

Fraunhofer ISE Amonix back-contact [46]


b

(da), designated illumination area; (ap), aperture area.

c

One sun corresponds to direct irradiance of 1000 W/m2.

d

Not measured at an external laboratory.

e


f

Measured under a low aerosol optical depth spectrum similar to ASTM G-173-03 direct [52].

g


h

Measured under old ASTM E891-87 reference spectrum.

i

Description


interest to sections of the photovoltaic community, with entries based on their significance and timeliness. To ensure discrimination, Table III is limited to nominally 10 entries with the present authors having voted for their preferences for inclusion. Readers who have suggestions of results for inclusion into this Table are welcome to contact any of the authors with full details. Suggestions conforming to the guidelines will be included on the voting list for a future issue. Table IV shows the best results for concentrator cells and concentrator modules (a smaller number of ‘‘notable exceptions’’ for concentrator cells and modules additionally is included in Table IV). Ten new results are reported in the present version of these Tables. The first new result in Table I is for a layer transfer, 43 mm thick silicon solar cell with 19.1% efficiency measured for a 4 cm2 cell fabricated by the Institute for Solar Energy Research, Hamelin (ISFH) [4] and measured by the Fraunhofer Institute for Solar Energy Systems (FhGISE), representing a large improvement on the previously best result of 16.7% for a cell of this type. The second new result in Table I is an outright record for solar conversion by any single-junction photovoltaic device, following on from the 27.6% result reported in the previous version of these Tables [3]. An efficiency of 28.1% has been measured at the National Renewable Energy Laboratory (NREL) for a 1 cm2 thin-film GaAs 568

device fabricated by Alta Devices, Inc. Alta Devices is a Santa Clara based ‘‘start-up’’ seeking to develop low-cost, 30% efficient solar modules [5]. A third new result in Table I is for a dye-sensitized cell with efficiency of 10.9% reported for a 1 cm2 cell fabricated by Sharp [6] and measured by the Japanese National Institute of Advanced Industrial Science and Technology (AIST). The final new result in Table I is for a small area (1.05 cm2) triple junction amorphous/nanocrystalline silicon solar cell (a-Si/nc-Si/nc-Si) fabricated by United Solar (USlr) [7] where a stabilized efficiency of 12.4% has been measured by NREL. Following a vigorous burst of activity in the multicrystalline silicon module area reported in the three previous versions of these Tables, where five groups exceeded the previous record for module efficiency over an 18 month period, one of these groups has done even better. In Table II, a new efficiency record of 17.8% is reported for a large (1.5 m2 aperture area) module fabricated by Q-Cells [8] and measured by the European Solar Test Installation, Ispra (ESTI). Also reported in Table II is a record result for a thin-film GaAs module, with an efficiency of 21.1% reported for a 0.92 m2 module fabricated by Alta Devices [5] and measured by NREL. With the recent improvement in GaAs cell performance reported in Table I, this efficiency might also be expected to improve rapidly in the future.


M. A. Green et al.


Figure 1. (a) EQE for the new GaAs cell and module results in this issue, as well as for the new dye-sensitized cell and the new CdTe module results; and (b) EQE for the new silicon cell and module entries in this issue plus for the new CZTSS cell result ( normalized data).

Figure 2. (a) Current density–voltage (JV) curve for the new GaAs cell and module results in this issue, as well as for the new dye-sensitized cell and the new CdTe module results; and (b) JV curves for the new silicon cell and module entries in this issue plus for the new CZTSS cell result ( cells per series string estimated).

The final new result in Table II is a new record for a thinfilm CdTe module. An efficiency of 12.8% was measured by NREL for a 0.7 m2 module fabricated by PrimeStar Solar [9]. The first new result in Table III relates to an efficiency increase to 19.5% for a large 243 cm2 multicrystalline silicon cell fabricated by Q-Cells [8] and measured by FhG-ISE. The cell is described as using screen-printed contacts with a dielectrically passivated rear, with local rear contacts formed by laser firing. Another new result in Table III is the improvement of a small area (0.45 cm2) Cu2ZnSnS4 ySey (CZTSS) cell fabricated by IBM T. J. Watson Research Center [10] to 9.7% efficiency as measured by NREL. This cell is smaller than the 1 cm2 size required for classification as an outright record. Yet another new result is reported in Table IV for a high performance concentrator cell. This is a new efficiency record for any photovoltaic cell with 43.5% efficiency measured by NREL at 418 suns concentration (418 kW/m2 irradiance) for a 0.3 cm2 cell fabricated by Solar Junction using a proprietary approach [11].

This cell maintained efficiency above 43% to 1000 suns concentration. The external quantum efficiencies (EQE), in some cases normalized to the peak EQE values, for the new GaAs cell and module results of Tables I and II are shown in Figure 1a as well as the response for the dye-sensitized cell of Table I and the CdTe module of Table II. Figure 1b shows the EQE of the new silicon cell and modules results in the present issue of these Tables together with the new CZTSS result (normalized) of Table III. The wavelength at which the EQE drops to 50% of its peak value at long wavelength provides a reasonable estimate of the cell bandgap, estimated in this way as 1.27 eV for the CZTSS cell. The bandgaps of CZTSS and CZTS are commonly quoted as circa 1.0 and 1.5 eV, respectively [12], suggesting a mid-range composition for the record cell. Figure 2 shows the current density–voltage (JV) curves for the corresponding devices. For the case of modules and tandem cells, the measured current–voltage data has been reported on a ‘‘per cell’’ basis (voltage has been divided by the number of cells in series per series string, while current


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has been multiplied by this quantity and divided by the cell or module area). In some cases the number of cells per series string has been estimated.

11. 12.

3. DISCLAIMER While the information provided in the tables is provided in good faith, the authors, editors, and publishers cannot accept direct responsibility for any errors or omissions.

REFERENCES

14.

1. Green MA, Emery K, King DL, Igari S. Solar cell efficiency tables (Version 15). Progress in Photovoltaics: Research and Applications 2000; 8: 187– 196. 2. Green MA, Emery K, Hishikawa Y, Warta W. Solar cell efficiency tables (Version 33). Progress in Photovoltaics: Research and Applications 2009; 17: 85–94. 3. Green MA, Emery K, Hishikawa Y, Warta W. Solar cell efficiency tables (Version 37). Progress in Photovoltaics: Research and Applications 2011; 19: 84–92. 4. Petermann JH, Zielke D, Schmidt J, Haase F, Rojas EG, Brendel R. 19%-Efficient and 43 mm-thick crystalline Si solar cell from layer transfer using porous silicon. Progress in Photovoltaics (accepted for publication). 5. Kayes BM, Nie H, Twist R, Spruytte SG, Reinhardt F, Kizilyalli IC, Higashi GS, 27.6% Conversion Efficiency, a New Record for Single-Junction Solar Cells Under 1 Sun Illumination. Proceedings, 37th IEEE Photovoltaic Specialist Conference, Seattle, June 2011; http://www.greentechmedia.com/articles/read/ stealthy-alta-devices-next-gen-pv-challenging-thestatus-quo/. 6. Koide N, Yamanaka R, Katayama H. Recent advances of dye-sensitized solar cells and integrated modules at SHARP. MRS Proceedings 2009; 1211: 1211-R12-02. 7. Banerjee A, Su T, Beglau D, Pietka G, Liu F, DeMaggio G, Almutawalli S, Yan B, Yue G, Yang J, Guha S. High efficiency, multi-junction nc-Si:h based solar cells at high deposition rate. 37th IEEE PVSC, Seattle, June 2011. 8. Engelhart P, Wendt J, Schulze A, Klenke C, Mohr A, Petter K, Stenzel F, Ho¨rnlein S, Kauert M, Jungha¨nel M, Barkenfelt B, Schmidt S, Rychtarik D, Fischer M, Mu¨ller JW, Wawer P. R&D pilot line production of multi-crystalline Si solar cells exceeding cell efficiencies of 18%. Energy Procedia, 1st International Conference on Silicon Photovoltaics, Freiburg, 17–20 April 2010; (www.Elsevier.com/locate/procedia). 9. GE Achieves Highest Publicly Reported Efficiency for Thin Film Solar, Earns New Orders and Unveils Plans to Build US Manufacturing Plant, Press Release, April 7 2011 (www.primestarsolar.com). 10. Todorov TK, Reuter KB, Mitzi DB. High-efficiency solar cell with earth-abundant liquid-processed absor570

13.

15.

16.

17.

18.

19.

20.

21.

22.

ber. Advanced Energy Materials 2010; 22: E156– E159. www.sj-solar.com. Guo Q, Ford GM, Yang W-C, Walker BC, Stach EA, Hillhouse HW, Agrawal R. Fabrication of 7.2% efficient CZTSSe solar cells using CZTS nanocrystals. Journal of the American Chemical Society 2010; 132(49): 17384–17386. Zhao J, Wang A, Green MA, Ferrazza F. Novel 19.8% efficient ‘‘honeycomb’’ textured multicrystalline and 24.4% monocrystalline silicon solar cells. Applied Physics Letters 1998; 73: 1991–1993. Schultz O, Glunz SW, Willeke GP. Multicrystalline silicon solar cells exceeding 20% efficiency. Progress in Photovoltaics: Research and Applications 2004; 12: 553–558. Keevers MJ, Young TL, Schubert U, Green MA. 10% Efficient CSG Minimodules. 22nd European Photovoltaic Solar Energy Conference, Milan, September 2007. Progress in Photovoltaics: Research and Applications 2008; 16: 235–239. Venkatasubramanian R, O’Quinn BC, Hills JS, Sharps PR, Timmons ML, Hutchby JA, Field H, Ahrenkiel A, Keyes B. 18.2% (AM1.5) efficient GaAs solar cell on optical-grade polycrystalline Ge substrate. Conference Record, 25th IEEE Photovoltaic Specialists Conference, Washington, May 1997; 31–36. Keavney CJ, Haven VE, Vernon SM. Emitter structures in MOCVD InP solar cells. Conference Record, 21st IEEE Photovoltaic Specialists Conference, Kissimimee, May 1990; 141–144. Repins I, Contreras MA, Egaas B, DeHart C, Scharf J, Perkins CL, To B, Noufi R. 19.9%-Efficient ZnO/CdS/ CuInGaSe2 solar cell with 81.2% fill factor. Progress in Photovoltaics: Research and Applications 2008; 16: 235–239. Kessler J, Bodegard M, Hedstrom J, Stolt L. New world record Cu (In,Ga) Se2 based mini-module: 16.6%. Proceedings, 16th European Photovoltaic Solar Energy Conference, Glasgow, 2000; 2057– 2060. Wu X, Keane JC, Dhere RG, DeHart C, Duda A, Gessert TA, Asher S, Levi DH, Sheldon P. 16.5%efficient CdS/CdTe polycrystalline thin-film solar cell. Conf. Proceedings, 17th European Photovoltaic Solar Energy Conference, Munich, 22–26 October 2001; 995–1000. Benagli S, Borrello D, Vallat-Sauvain E, Meier J, Kroll U, Ho¨tzel J, Spitznagel J, Steinhauser J, Castens L, Djeridane Y. High-efficiency Amorphous Silicon Devices on LPCVD-ZNO TCO Prepared in Industrial KAI-M R&D Reactor. 24th European Photovoltaic Solar Energy Conference, Hamburg, September 2009. Yamamoto K, Toshimi M, Suzuki T, Tawada Y, Okamoto T, Nakajima A. Thin film poly-Si solar cell on glass substrate fabricated at low temperature. MRS Spring Meeting, San Francisco, April 1998.


M. A. Green et al.

23. Morooka M, Ogura R, Orihashi M, Takenaka M. Development of dye-sensitized solar cells for practical applications. Electrochemistry 2009; 77: 960–965. 24. http://www.konarka.com. 25. http://www.solarmer.com. 26. Mitchell K, Eberspacher C, Ermer J, Pier D. Single and tandem junction CuInSe2 cell and module technology. Conf. Record, 20th IEEE Photovoltaic Specialists Conference, Las Vegas, September, 1988; 1384– 1389. 27. Bailat J, Fesquet L, Orhan J, Djeridane Y, Wolf B, Madliger P, Steinhauser J, Benagli S, Borrello D, Castens L, Monteduro G, Marmelo M, Dehbozorghi B, Vallat-Sauvain E, Multone X, Romang D, Boucher J, Meier J, Kroll U. Recent developments of highefficiency micromorph1 tandem solar cells in Kai-M PECVD reactors. 25th European Photovoltaic Solar Energy Conf., Valencia, September 2010. 28. Yoshimi M, Sasaki T, Sawada T, Suezaki T, Meguro T, Matsuda T, Santo K, Wadano K, Ichikawa M, Nakajima A, Yamamoto K. High efficiency thin film silicon hybrid solar cell module on Im2-class large area substrate. Conf. Record, 3rd World Conference on Photovoltaic Energy Conversion, Osaka, May 2003; 1566–1569. 29. http://www.heliatek.com. 30. Jorgensen M, Norrman K, Krebs FC. Stability/degradation of polymer solar cells. Solar Energy Materials and Solar Cells 2008; 92: 686–714. 31. Kato N, Higuchi K, Tanaka H, Nakajima J, Sano T, Toyoda T. Improvement in the long-term stability of dye-sensitized solar cell for outdoor use. Presented at 19th International Photovoltaic Science and Engineering Conference, Korea, November 2009. 32. Zhao J, Wang A, Yun F, Zhang G, Roche DM, Wenham SR, Green MA. 20,000 PERL silicon cells for the ‘‘1996 World Solar Challenge’’ solar car race. Progress in Photovoltaics 1997; 5: 269–276. 33. Swanson RM. Solar cells at the cusp. Presented at 19th International Photovoltaic Science and Engineering Conference, Korea, November 2009. 34. Basore PA. Pilot production of thin-film crystalline silicon on glass modules. Conf. Record, 29th IEEE Photovoltaic Specialists Conference, New Orleans, May 2002; 49–52. 35. http://www.miasole.com. 36. Tanaka Y, Akema N, Morishita T, Okumura D, Kushiya K. Improvement of Voc upward of 600mV/cell with CIGS-based absorber prepared by Selenization/Sulfurization. Conf. Proceedings, 17th EC Photovoltaic Solar Energy Conference, Munich, October 2001; 989–994. 37. Yang J, Banerjee A, Glatfelter T, Hoffman K, Xu X, Guha S. Progress in triple-junction amorphous siliconbased alloy solar cells and modules using hydrogen dilution. Conf. Record, 1st World Conference on Photovoltaic Energy Conversion, Hawaii, December 1994; 380–385.


38. Zhao J, Wang A, Green MA. 24.5% Efficiency silicon PERT cells on MCZ substrates and 24.7% efficiency PERL cells on FZ substrates. Progress in Photovoltaics 1999; 7: 471–474. 39. Cousins PJ, Smith DD, Luan HC, Manning J, Dennis TD, Waldhauer A, Wilson KE, Harley G, Mulligan GP. Gen III: Improved Performance at Lower Cost. 35th IEEE PVSC, Honolulu, HI, June 2010. 40. Maruyama E, Terakawa A, Taguchi M, Yoshimine Y, Ide D, Baba T, Shima M, Sakata H, Tanaka M. Sanyo’s challenges to the development of highefficiency HIT solar cells and the expansion of HIT business. 4th World Conference on Photovoltaic Energy Conversion (WCEP-4), Hawaii, May 2006. 41. Takamoto T, Sasaki K, Agui T, Juso H, Yoshida A, Nakaido K. III–V compound solar cells. SHARP Technical Journal 2010; 100: 1–10. 42. Jackson P, Hariskos D, Lotter E, Paetel S, Wuerz R, Menner R, Wischmann W, Powalla M. New world record efficiency for Cu(In,Ga)Se2 thin-film solar cells beyond 20%. Progress In Photovoltaics: Research and Applications, 2011; published online DOI: 10.1002/pip.1078. (Presented at 25th EU PVSEC WCPEC-5, Valencia, Spain, 2010). 43. Yan B, Yue G, Guha S. Status of nc-Si:H solar cells at United Solar and roadmap for manufacturing a-Si:H and nc-Si:H based solar panels. In ‘‘Amorphous and Polycrystalline Thin-Film Silicon Science and Technology 2007,’’ Chu V, Miyazaki S, Nathan A, Yang J, Zan H-W (eds). (eaterials Research Society Symposium Proceedsings Vol). 989: Materials Research Society: Warrendale, PA, 2007; Paper #: 0989-A1501. 44. Han L, Fukui A, Fuke N, Koide N, Yamanaka R. High efficiency of dye sensitized solar cell and module. 4th World Conference on Photovoltaic Energy Conversion (WCEP-4), Hawaii, May 2006. 45. Slooff LH I, Bende EE, Burgers AR, Budel T, Pravettoni M, Kenny RP, Dunlop ED, Buechtemann A. A luminescent solar concentrator with 7.1% power conversion efficiency. Physica Status Solidi (RRL) 2008; 2(6): 257–259. 46. Slade A, Garboushian V. 27.6% efficient silicon concentrator cell for mass production. Technical Digest, 15th International Photovoltaic Science and Engineering Conference, Shanghai, October 2005; 701. 47. King RR, Boca A, Hong W, Liu X-Q, Bhusari D, Larrabee D, Edmondson KM, Law DC, Fetzer CM, Mesropian S, Karam NH. Band-gap-engineered architectures for high-efficiency multijunction concentrator solar cells. Presented at the 24th European Photovoltaic Solar Energy Conference and Exhibition, Hamburg, Germany, 21–25 September 2009; 48. McCambridge JD, Steiner MA, Unger BA, Emery KA, Christensen EL, Wanlass MW, Gray AL, Takacs L, Buelow R, McCollum TA, Ashmead JW, Schmidt GR,


571

M. A. Green et al.


Haas AW, Wilcox JR, Meter JV, Gray JL, Moore DT, Barnett AM, Schwartz RJ. Compact spectrum splitting photovoltaic module with high efficiency. Progress In Photovoltaics: Research and Applications 2011; 19: 352–360. 49. O’Neil MJ, McDanal AJ. Outdoor measurement of 28% efficiency for a mini-concentrator module, Proceedings, National Center for Photovoltaics Program Review Meeting, Denver, 16–19 April 2000.

572

50. Chiang CJ, Richards EH. A 20% efficient photovoltaic concentrator module. Conf. Record, 21st IEEE Photovoltaic Specialists Conference, Kissimimee, May 1990; 861–863. 51. Zhang F, Wenham SR, Green MA. Large area, concentrator buried contact solar cells. IEEE Transactions on Electron Devices 1995; 42: 144–149. 52. Gueymard CA, Myers D, Emery K. Proposed reference irradiance spectra for solar energy systems testing. Solar Energy 2002; 73: 443–467.
