Special section on compound semiconductor ... - IEEE Xplore

354

IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, VOL. 16, NO. 3, AUGUST 2003

Guest Editorial Special Section on Compound Semiconductor Microelectronics Manufacturing: The Future is Here

I

N THE PAST, electronics circuit designers resorted to III–V microelectronics only for ultra-high bandwidth applications such as precision electronic test and measurement instrumentation unattainable by silicon. However in recent years, III–V microelectronics [named after the columns their constituents occupy in the periodic table of elements; e.g., gallium arsenide (GaAs) and indium phosphide (InP)] earned its place in the block diagram of consumer electronic devices such as cellular phones (hence the subtitle “The Future is Here”). In light of this trend, we thought the readership of the IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING might find it worthwhile to have the opportunity to read up on the status of the “other” microelectronics technology that has learned to co-exist with the mainstream CMOS-compatible microelectronics. III–V microelectronics is not driven by Gordon Moore’s aspirational law (first law) that forecasted a doubling of transistor density every one to two years. Instead it is driven by the need to address market needs that CMOS-compatible technologies cannot meet, e.g., low noise and power added efficiency. Although III–V integrated circuits predominantly exhibit modest integration levels, transistor counts to almost 1 000 000 have been demonstrated (see the paper contributed by Vitesse), a complexity considered unattainable not long ago. The collection of papers in this special section covers the whole gamut of III–V compound semiconductor microelectronics manufacturing, from materials growth, device design and process technologies, to manufacturability and manufacturing management. We believe it represents a good Digital Object Identifier 10.1109/TSM.2003.815634

overview of the range of issues in which the III–V compound semiconductor microelectronics industry is engaged as well as opportunities that lie ahead for our community. We would like to thank D. Boning, the Editor of the IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, for the opportunity to showcase III–V compound semiconductor microelectronics technology for the readership of this journal.

ROLF JAEGER, Guest Editor Agilent Technologies Electronics Research Laboratory Device Technology Department Palo Alto, CA 94304 USA JESÚS A. DEL ALAMO, Guest Editor Massachusetts Institute of Technology Department of Electrical Engineering and Computer Science Cambridge, MA 02139 USA MASUMI FUKUTA, Guest Editor Fujitsu Quantum Devices Ltd. Yamanashi 409-3883, Japan HERBERT S. BENNETT, Guest Editor National Institute of Standards and Technology Gaithersburg, MD 20899-8120 USA CHRISTOPHER M. SNOWDEN, Guest Editor Filtronic plc West Yorkshire BD18 3TT, U.K.

Rolf Jaeger received the Ph.D. degree in physics from the Technical University of Munich, West Germany, with a dissertation in surface science in 1979. From 1979 to 1983, he worked as postdoctoral fellow at the Stanford Synchrotron Radiation Laboratory studying adsorption layers on metal and semiconductor single-crystal surfaces using photostimulated desorption and X-ray absorption techniques. He joined Hewlett-Packard Laboratories in 1983 as Member of Technical Staff in the Silicon Device Laboratory in Palo Alto to work on the application of X-ray lithography to Si MOSFET fabrication. In 1985, he became project manager of the self-aligned GaAs MODFET technology development in the Digital IC Department of the High-Speed Devices Laboratory. In 1990, he became the manager of the department and launched HP Labs’ Micromechanics program which culminated to date in FBAR filter technology for cellular handset duplexers commercialized by the Semiconductor Products Group of Agilent Technologies. Currently, he manages the Microtechnology Department in the Electronic Research Laboratory at the Corporate Laboratories of Agilent Technologies, Palo Alto, CA. He is responsible for the development of next-generation electronic device technologies and RF-MEMS technology. Dr. Jaeger has been a member of the American Physical Society since 1980. 0894-6507/03$17.00 © 2003 IEEE


355

Jesús A. del Alamo (M’79–SM’85–F’92) received the degree of telecommunications engineer from the Polytechnic University of Madrid, Spain, in 1980, and the M.S. and Ph.D. degrees in electrical engineering from Stanford University, Stanford, CA, in 1983 and 1985, respectively. From 1977 to 1981, he was with the Institute of Solar Energy of the Polytechnic University of Madrid, working on silicon solar cells. At Stanford University, he carried out his Ph.D. dissertation on minority carrier transport in heavily doped silicon. From 1985 to 1988, he was research engineer with NTT LSI Laboratories, Atsugi, Japan, where he conducted research on III–V heterostructure field-effect transistors. Since 1988, he has been with the Department of Electrical Engineering and Computer Science of Massachusetts Institute of Technology, Cambridge, MA, where he is currently Professor. His current research interests are on Gigahertz power transistors: Si LDMOS on SOI, RF power CMOS, GaAs PHEMTs and InP HEMTs. He is also active in online laboratories for science and engineering education. From 1991 to 1996, Prof. del Alamo was an NSF Presidential Young Investigator. In 1992, he was awarded the Baker Memorial Award for Excellence in Undergraduate Teaching at MIT. In 1993, he received the H. E. Edgerton Junior Faculty Achievement Award at MIT. In 1999, he was elected a corresponding member of the Spanish Academy of Engineering. In 2001, he received the Louis D. Smullin Award for Excellence in Teaching and the Class of 1960 Innovation in Education Award, both at MIT. In 2002, he received the Amar Bose Award for Excellence in Teaching from MIT. In 2003, he was selected as a MacVicar Faculty Fellow at MIT.

Masumi Fukuta (M’73) received the B.S. degree in electrical engineering from Nagoya Institute of Technology, Nagoya, Japan, in 1963 and the Ph.D. degree in electrical engineering from Nagoya University, Nagoya, Japan, in 1977. In 1963, he joined Kobe Industries Co., which later merged with Fujitsu Ltd. From 1963 to 1973, he worked in the field of semiconductor devices including Si bipolar RF power transistors, Si MOSFETs, and power GaAs FETs. In 1967, he invented the “Mesh Emitter Transistor.” He presented the first paper of power GaAs FET at ISSCC ’73. In 1974, he developed the first Si power MOSFET in -band applications. From 1974 to 1980, he supervised development of HEMT, power GaAs FETs and GaAs ICs in Fujitsu Laboratories. After he moved from Fujitsu Laboratories to Compound Semiconductor Div. Fujitsu in 1980, he managed business on many compound semiconductor devices for microwave and optical applications. He is now president and CEO of Fujitsu Quantum Devices Ltd. He has been granted more than 20 patents and has written more than 40 technical papers. He authored the books Basis of GaAs FETs and Compound Semiconductor Devices for Internet Applications written in Japanese. Dr. Fukuta received a prize medal from the Minister of Science and technology in Japan in 1975 for outstanding contribution to the development of power GaAs FETs. He received “Microwave Application Award” from IEEE MTT Society in 1988 “for recognition and demonstration of the potential of GaAs Field Effect Transistors for power applications.” He is a fellow member of the Institute of Electronics, Information and Communication Engineering of Japan.

356


Herbert S. Bennett (M’72–SM’85–F’97) received AB (magna cum laude) and Ph.D. degrees in physics from Harvard University, Cambridge, MA, in 1958 and 1964, respectively, and the M.S. degree in physics and mathematics from the University of Maryland, College Park, in 1960. He served in the U.S. Navy from 1958 to 1960. From 1964 to 1966, he was a Research Associate with the Atomic Energy Research Establishment (U.K.) and with the University of Illinois, Department of Physics and Materials Research Laboratory. He has held management and research positions at NIST and management positions at the Department of Commerce and the National Science Foundation. He was appointed a Department of Commerce Science and Technology Fellow for 1971 and 1972 and served as a Special Assistant to the Assistant Secretary for Science and Technology. He was the Director of the Division of Materials Research at the National Science Foundation from 1978 to 1980. He was the Chairman of the 1994 NUPAD (International Conference on Numerical Modeling of Processes and Devices) and helped unify three international conferences called NUPAD, VPAD (VLSI Process and Device Modeling), and SISDEP (Simulation of Semiconductor Devices and Processes) into one international meeting called SISPAD (Simulation of Semiconductor Processess and Devices). He has served and continues to serve on industrial and government advisory boards and committees. He has contributed to industrial consensus-based planning in computer assisted design for the silicon industry (NTRS and ITRS) and in RF components and compound semiconductors for the National Electronics Manufacturing Initiative, Inc. He has written over 120 archival technical publications on such topics as magnetic phase transitions in semiconductors and insulators, the Faraday effect, color centers in ionic crystals, and damage mechanisms in laser materials. His more recent research interests and publications include topics on semiconductor device physics, optoelectronics, and video technologies. Dr. Bennett received Maryland’s Outstanding Young Scientist Award for 1970 from the Maryland Academy of Sciences for his extensive theoretical work on ferromagnetic materials near their Curie temperatures, on analyses of temperatures and stresses induced in laser glasses, and on original calculations of electronic states and lattice vibrations in the vicinity of defects in ionic crystals. He is a NIST Fellow and Executive Advisor at the National Institute of Standards and Technology (NIST), formerly the National Bureau of Standards, Gaithersburg, MD. He has been a member of the APS since 1958. He was elected a member of the IEEE Electron Devices Society Administrative Committee from 1995 to 2000 and continues to serve as chairman of its Compound Semiconductor Devices and Circuits Technical Committee. He currently is involved with promoting an International Technology Roadmap for Compound Semiconductors. In 1997, he was elected a Fellow of IEEE for his pioneering work on applying solid-state theories and quantum mechanics to model the effects of high concentrations of carriers and dopants in advanced semiconductor devices.

Christopher M. Snowden (S’82–M’82–SM’91–F’96) received the B.Sc. (Hons.), M.Sc. and Ph.D. degrees from the University of Leeds, U.K. After graduating in 1977, he worked as an Applications Engineer for Mullard. His Ph.D. studies were later conducted in association with Racal-MESL and were concerned with the large-signal characterization and design of MESFET microwave oscillators. He has held the personal Chair of Microwave Engineering at the University of Leeds since 1992. During the period 1995–1998, he was Head of the Department and subsequently Head of the School of Electronic and Electrical Engineering. He was the first Director of the Institute of Microwaves and Photonics located in the School. He was a Consultant to M/A-COM Inc., from 1989 to 1998. In 1998, he joined Filtronic as Director of Technology. He is currently Chief Executive of Compound Semiconductors, Filtronic plc and Professor of Microwave Engineering at the University of Leeds. His main research interests include compound semiconductor device and circuit technology. He has written eight books, over 260 refereed journal and conference papers, and many other articles. Dr. Snowden was awarded the 1999 Microwave Prize of the IEEE Microwave Theory and Techniques Society. He is a Fellow of the Royal Academy of Engineering, and a Fellow of the IEE. He is currently a Distinguished Lecturer for the IEEE Electron Devices Society.