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400 °C. ○ Bi12.7S18I2 (PDF 01-073-1157) ... Atomic % of BiOI before and after H2S treatment as determined by EDX analysis. ... DOS (Electrons / eV). 6. 4. 2. 0.
Supporting information Low-Temperature Synthesis of Bismuth Chalcohalides: Candidate Photovoltaic Materials with Easily, Continuously Controllable Band gap Hironobu Kunioku1, Masanobu Higashi1, Ryu Abe1,2,* 1

Department of Energy and Hydrocarbon Chemistry, Graduate School of Engineering, Kyoto University Katsura, Nishikyo-ku, Kyoto 615-8510, Japan 2

CREST, Japan Science and Technology Agency (JST), Kawaguchi, Saitama 332-0012, Japan *

[email protected]

Si

● Bi12.7S18I2 (PDF 01-073-1157)



Intensity / a. u.



● ●

● ●

●● ● ● ● ●● ●●

● ●●



400 °C

● ●

●● ●● ● ●● ● ● ● ●



300 °C



200 °C 150 °C BiSI (PDF 00-043-0652)

10

20

30 40 2θ / degree (Cu Kα)

50

60

Figure S1. XRD patterns of the prepared samples at high temperature.

Table S1. Atomic % of BiOI before and after H2S treatment as determined by EDX analysis. Atomic % Before

After

Bi

34

34

O

33

n.d.

S

n.d.

32

I

33

33

BiSI (PDF 00-043-0652)

Intensity / a. u.

(d) 60 min (c) 30 min (b) 15 min (a) Before BiOI (PDF 00-010-0445)

10

20

30

40

50

60

2θ / degree (Cu Kα)

Figure S2. XRD patterns of prepared samples (a) before and after the heat treatment with 5% H2S gas at 150 °C for (b) 15 min, (c) 30 min, and (d) 60 min.

Figure S3. SEM images of prepared BiOI and BiSI (after heating under H2S flow at 150 °C).

BiSeI (PDF 00-044-0162)

Intensity / a. u.

After H2Se treatment

Before

BiOI (PDF 00-010-0445)

10

20

30

40

50

60

2θ / degree (Cu Kα)

Figure S4. XRD patterns of prepared BiSBr1–xIx samples by heat treatment with H2Se gas.

Kubelka−Munk / a. u.

3

BiSeI 2

1

BiSI 0 400

500

600

700

800

900

1000

Wavelength / nm

Figure S5. UV–vis diffuse reflectance spectra of BiSI and BiSeI.

Figure S6. Crystal structure of BiOX (X = Cl, Br, I).

8.6

10.4

8.5

b-axis /Å b-axis/Å

a-axis /Å a-axis/Å

10.2 8.4 8.3 8.2

10.0

9.8 8.1 8.0

9.6 0.0

0.2

0.4

0.6

0.8

1.0

I− content x for x BiSBr1−xIx

0.0

0.2

0.4

0.6

0.8

I− content xxfor BiSBr1−xIx

4.20

c-axis /Å c-axis/Å

4.15

4.10

4.05

4.00 0.0

0.2

I−

0.4

0.6

0.8

1.0

content x for x BiSBr1−xIx

Figure S7. Lattice constants of BiSBr1–xIx calculated by Le Bail analysis.

1.0

I/(Br+I)

1.0

BiOBr1−xIx ● BiSBr1−xIx

EDX EDX Atomic atomic Ratios ratio



0.8 0.6 0.4 0.2 0.0 0.0

0.2

I−

0.4

0.6

0.8

1.0

content x for BiOBr I or BiSBr1−xIx x 1−x x

Figure S8. Atomic ratio of I to (Br+I) determined by the EDX analysis of BiOBr1–xIx and BiSBr1–xIx.

2.8

! BiOBr1−xIx ! BiSBr1−xIx

Indirect Band Indirect band Gap gap // eV eV

2.6 2.4 2.2 2.0 1.8 1.6 1.4 0.0

0.2

I−

0.4

0.6

0.8

1.0

content x for BiOBr x 1−xIx or BiSBr1−xIx

Figure S9. Indirect band gap of BiOBr1–xIx and BiSBr1–xIx.

40

25

b) BiSI

Total Bi (Total) S (Total) Br (Total)

30

DOS(Electrons (Electrons/ /eV) eV) DOS

DOS (Electrons DOS (Electrons //eV) eV)

a) BiSBr

20

10

Total Bi (Total) S (Total) I (Total)

20

15

10

5

0

0 -4

-2

0

2

4

6

-4

-2

Energy / eV Energy

0 2 Energy Energy/ /eV eV

4

6

Figure S10. Density of states (DOS) of a) BiSBr and b) BiSI, and PDOS projected onto each constituent element.

14 DOS (Electrons / eV)

12

a) BiOBr

Total Bi (Total) O (Total) Br (Total)

12 10 8 6 4

b) BiOI

Total Bi (Total) O (Total) I (Total)

10 DOS (Electrons / eV)

16

8 6 4 2

2

0

0 -6

-4

-2

0

2

Energy / eV

4

6

-6

-4

-2

0

2

4

6

Energy / eV

Figure S11. Density of states (DOS) of a) BiOBr and b) BiOI and, PDOS projected onto each constituent element.

SnO2

BiSI (PDF 00-043-0652)

Intensity / a. u.

After H2S treatment

BiOI-cated FTO (via squeegee)

BiOI (PDF 00-010-0445) 10

20

30

40

50

60

2θ / degree (Cu Kα)

Figure S12. XRD patterns of the BiSI electrode prepared via the squeegee method using BiOI particles, which involves heating the BiOI-coated FTO under H2S/Ar at 150 °C.

SnO2

BiSI (PDF 00-043-0652)

Intensity / a. u.

After H2S treatment

BiOI-cated FTO (via EPD)

BiOI (PDF 00-010-0445) 10

20

30

40

50

60

2θ / degree (Cu Kα)

Figure S13. XRD patterns of the BiSI electrode prepared by heating the BiOI-coated FTO via the EPD of BiOI particles under H2S/Ar at 150 °C.

BiOI (PDF 00-010-0445)

001

x = 1.0

Intensity

Intensity / a. u.

x = 0.8 x = 0.6 x = 0.4 x = 0.2 x=0 BiOBr (PDF

10

20

30

40





50

)

001

60 9

10

2θ / degree (Cu Kα) 2θ/degree

11

12

2θ / degree (Cu Kα) 2θ/degree

Figure S14. XRD patterns of prepared BiOBr1–xIx.

4.00

a/Å / Å a-axis

3.98

3.96

3.94

3.92

3.90 0.0

0.2

I−

0.4

0.6

0.8

1.0

content x xfor BiOBr1−xIx

Figure S15. Lattice parameter of BiOBr1–xIx calculated by Le Bail analysis.