Tantalum and Tantalum-Based Films

US005919531A

United States Patent [19]

[11]

Patent Number:

5,919,531

Arkles et al.

[45]

Date of Patent:

*Jul. 6, 1999

[54]

TANTALUM AND TANTALUM-BASED FILMS

Mayumi Takeyama, et al., “Properties of TaNx Films as

AND METHODS OF MAKING THE SAME

Diffusion Barriers in the Thermally Stable Cu/Si Contact Systems”, J. Vac. Sci. Technol., vol. B14, No. 2 (Mar./Apr.

[75] Inventors: Barry C. Arkles, Dresher, Pa.; Alain E. Kaloyeros, Slingerlands, NY.

[73] Assignees: Gelest, Inc., TullytoWn, Pa.; The Research Foundation of State

University of New York, Albany, NY. [*]

Notice:

This patent issued on a continued pros

ecution application ?led under 37 CFR 1.53(d), and is subject to the tWenty year patent term provisions of 35 U.S.C.

154(a)(2).

1996), pp. 674—678. M.H. Kiang et al., “PlanariZed Copper Interconnects by Selective Electroless Plating,” Mat. Res. Soc. Symp. Proc., vol. 265 (1992), pp. 187—197. (no month). S.P. Murarka et al., “Advanced Multilayer MetalliZation Schemes With Copper as Interconnection Metal”, Thin Solid

Films, vol. 236, (1993), pp. 257—266. (no month). J. Nucci et al., “In—Situ Analysis of the Microstructure of

Thermally Treated Thin Copper Films,” Mat. Res. Soc.

Symp. Proc., vol. 309, pp. 377—383. (no date). D.P. Tracy et al., “Texture and Microstructure of Thin

Copper Films,”Journal ofElectronic Materials, vol. 22, No. 6 (1993), pp. 611—616. (no month).

[21] Appl. No.: 08/824,581

E. KolaWa et al., “Tantalum—Based Diffusion Barriers In

Si/Cu VLSI MetalliZations,” J. Appl. Phys., vol. 70, No. 3

[22]

Filed:

Mar. 26, 1997

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Takeo Oku et al., “Thermal Stability of WNx and TaNx Diffusion Barriers BetWeen Si and Cu,” Proceedings of the

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ence (VMIC, Tampa, Florida) (1995), pp. 182—185. (no

Nadel, PC.

ABSTRACT

Proceedings of the IEDM, (1995), pp. 461—464. (no month).

A method for chemical vapor deposition of a ?lm compris ing tantalum onto a substrate includes introducing into a deposition chamber: a substrate; (ii) a source precursor in the vapor state; and (iii) at least one carrier gas, and maintaining the temperature of the substrate Within the

S.C. Sun et al., “Diffusion Barrier Properties of CVD Tantalum Nitride for Aluminum and Copper Interconnec tions,” Proceedings of the 12th International VLSI Multi

chamber as from about 70° C. to about 675° C. for a period of time suf?cient to deposit a ?lm comprising tantalum on the substrate. The source precursor has a formula (I):

month). S.C. Sun et al., “A Comparative Study of CVD TiN and CVD TaN Diffusion Barriers for Copper Interconnection,”

level Interconnection Conference (VMIC, Tampa, Florida) (1995), pp. 157—162. (no month). L. A. Clevenger et al., “Comparison of High Vacuum and

Barrier Performance Against Copper Penetration”, J. Appl. Phys. vol. 73, No. 1 (Jan. 1993), pp. 300—308. Karen HolloWay et al., “Tantalum as a Diffusion Barrier

Wherein m is an integer from 0 to 5, n is an integer from 0 to 4, p is an integer from 0 to 4, and R is selected from the

BetWeen Copper and Silicon: Failure Mechanism and Effect

group consisting of hydrogen, and loWer alkyl.

of Nitrogen Additions,” J. Appl. Phys. vol. 71, No. 11 (Jun. 1992), pp. 5433—5444.

28 Claims, 10 Drawing Sheets

U.S. Patent

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